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  • 1
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    German Medical Science GMS Publishing House; Düsseldorf
    In:  Deutscher Kongress für Orthopädie und Unfallchirurgie; 74. Jahrestagung der Deutschen Gesellschaft für Unfallchirurgie, 96. Tagung der Deutschen Gesellschaft für Orthopädie und Orthopädische Chirurgie, 51. Tagung des Berufsverbandes der Fachärzte für Orthopädie; 20101026-20101029; Berlin; DOCWI52-1441 /20101021/
    Publication Date: 2010-10-22
    Keywords: ddc: 610
    Language: German
    Type: conferenceObject
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  • 2
    ISSN: 0392-6737
    Keywords: Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter ; II–VI compounds and other chalcogenides ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary Picosecond photoluminescence spectroscopy was used to investigate the recombination dynamics of excitons in deep etched CdZnSe/ZnSe quantum wires with lateral extensions down to 20 nm. In the low-temperature regime (T≤10 K), no significant reduction of the exciton lifetime was found down to a wire width of 20 nm, indicating a negligible influence of carrier loss at the wire sidewalls. At higher temperatures, the lifetime decreases for decreasing wire width,e.g., from 330 ps in the mesa structure to 21 ps in the 28 nm wide wires at room temperature. Simple model calculations indicate that this drop of the lifetime is due to diffusive carrier transport to the wire sidewalls and subsequent non-radiative surface recombination.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1033-1035 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quantum-confined Stark effect in a single self-assembled CdSe/ZnSe quantum dot was studied by means of highly spatially resolved photoluminescence spectroscopy. A nanotechnological approach making use of a capacitor-like geometry enabled us to apply a well-defined lateral electric field on the quantum dots. Stark shifts of up to 1.1 meV were obtained, which can be well fitted by a purely quadratic dependence on an electric field. In quite good agreement with theoretical calculations, an exciton polarizability of 4.9×10−3 meV/(kV/cm)2 can be extracted, while the permanent dipole moment in the lateral direction is found to be negligible. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 956-958 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Buried single CdTe/CdMnTe quantum dots are realized by implantation-induced intermixing using a focused 100 keV Ga+ ion beam. For an implantation dose of 5×1013 cm−2 and an annealing temperature of 390 °C, a lateral potential depth of about 65 meV is obtained. By means of photoluminescence spectroscopy, the formation of zero-dimensional multiexcitons in single quantum dots is investigated, yielding a biexciton binding energy of about 3.5 meV. In addition, the occurrence of an excited biexciton transition in the photoluminescence spectrum gives clear evidence of a suppressed exciton spin-flip process in quantum dots. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1224-1226 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature recombination dynamics has been investigated in a large set of different Cu(In,Ga)Se2 absorber films and compared to the electrical device characteristics of the respective solar cell modules. For a given cell preparation process, a characteristic relation between the low-injection minority-carrier lifetime of the absorber layers and the conversion efficiency of the solar cells is observed: Long lifetimes correlate with high open circuit voltages and conversion efficiencies, while no significant influence of the lifetime on the short circuit current is found. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3105-3107 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zero-dimensional excitons (0DXs) in CdSe/ZnSe nanostructures have been studied by time- and spatially resolved photoluminescence spectroscopy. The three-dimensional confinement is confirmed by an exciton lifetime up to 550 ps, independent of temperature up to 130 K. By preparing mesa structures with diameters down to 50 nm as local probes, an extremely high spatial resolution is achieved, giving experimental access to single 0DXs. A splitting of the ground state into a linearly polarized doublet with an energy spacing up to 1.5 meV is found, varying from dot to dot in sign and magnitude. This indicates a noncircular shape with no preferential orientation of the dots. The dot density is estimated to increase from 5×1010 to 1.5×1011 cm−2, when changing the nominal CdSe layer thickness from 1 to 3 ML, i.e., close to the critical thickness. © 1998 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 344-346 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low damage dry etch technology suitable for in situ processing was developed for the fabrication of ZnSe-based nanostructures. Thermally assisted electron cyclotron resonance etching combines plasma etching at low ion energies with process temperatures between 80°C and 210°C. Due to a variation of the process parameters, i.e., plasma power and sample temperature, a transition from partially physical to prevailing chemical etch properties is obtained. Therefore an accurate control of etch profile, surface morphology, and etch rate is possible. Optically active CdZnSe/ZnSe quantum wires with lateral sizes down to 20 nm were realized, indicating a significantly reduced influence of optically inactive layers compared to conventionally dry etched nanostructures. In narrow wires, a systematic blue shift of the photoluminescence signal with decreasing wire width clearly demonstrates lateral carrier confinement effects. © 1997 American Institute of Physics.
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  • 8
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermally induced interdiffusion in CdTe/CdMnTe quantum wells was investigated by photoluminescence spectroscopy. The single quantum well structures were grown by molecular beam epitaxy annealed by rapid thermal annealing for 1 min at temperatures between 380 and 520 °C. A blue shift close to the barrier energy was observed indicating an almost perfect interdiffusion between the well and the barrier material. We derive an activation energy of 2.8 eV for the interdiffusion process from a Fickian diffusion model applied to our experiments.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1-3 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: First order distributed feedback laser with periods down to 94 nm based on ZnSe have been realized by electron beam lithography and wet chemical etching. Distributed feedback operation was demonstrated by optical excitation using a pulsed N2 laser. A threshold density of 80 kW/cm2 was found at room temperature for a resonator length of 225 μm. From the stop band width, a coupling coefficient of 120 cm−1 can be estimated. By varying the grating period the emission wavelength can be tuned over a wide spectral range of more than 130 meV. Measurements in the range between 20 and 300 K show that the shift of the emission wavelength with temperature is reduced by more than a factor of four as compared to the temperature shift of the spontaneous emission. © 1995 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1815-1817 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically active semiconductor wires with lateral extensions between 60 nm and 5 μm based on CdTe/Cd1−xMgxTe quantum well structures have been fabricated by electron beam lithography and subsequent pattern transfer using a wet chemical etching process. Changes of the relative photoluminescence efficiency have been studied by photoluminescence spectroscopy as a function of the wire widths. For narrow wires nonradiative recombination at the wire sidewalls becomes the major recombination mechanism, strongly decreasing the photoluminescence efficiency. We discuss the influence of the exciton diffusion on the photoluminescence efficiency by investigating the wire width dependence of the photoluminescence intensity as a function of temperature and quantum well thickness. High photoluminescence efficiencies are obtained in the case of small diffusion lengths as for example at low temperatures and narrow quantum wells. © 1995 American Institute of Physics.
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