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  • 1
    ISSN: 1365-2842
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Finite element analyses were performed for various shapes of dental implant to study effects on stress distribution generated in the surrounding jaw bone and to determine an optimal thread shape for even stress distribution. It was found that the square thread shape filleted with a small radius was more effective on stress distribution than other dental implants used in the analyses. Additional analyses were performed on the implant with the thread shape obtained from previous analyses for varying other design parameters, such as the width of thread end and height of thread for various load directions, to determine the optimal dimensions of the implant. Stress distribution was more effective in the case when the width of thread end and the height of thread were 0·5p and 0·46p, respectively, where p is the screw pitch. Then, using the optimal implant thread dimensions determined previously, stress analyses were performed with various screw pitches and implant lengths, to investigate effects on stress distribution and to find the way to reduce the maximum effective stress generated in the jaw bone. Results show that the maximum effective stress decreased not only as screw pitch decreased gradually but also as implant length increased.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1617-4623
    Keywords: Key words T-DNA ; Agrobacterium tumefaciens ; Arabidopsis thaliana ; DNA repair ; uvh1
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Stable transformation of plants by Agrobacterium T-DNAs requires that the transgene insert into the host chromosome. Although most of the Agrobacterium Ti plasmid genes required for this process have been studied in depth, few plant-encoded factors have been identified, although such factors, presumably DNA repair proteins, are widely presumed to exist. It has previously been suggested that the UVH1 gene product is required for stable T-DNA integration in Arabidopsis. Here we present evidence suggesting that uvh1 mutants are essentially wild type for T-DNA integration following inoculation via the vacuum-infiltration procedure.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermally stable, low-resistance PdGe-based ohmic contacts to high–low doped n-GaAs have been developed. The lowest contact resistance obtained is two times lower than that of previously reported PdGe ohmic contacts. The contacts are thermally stable even after isothermal annealing for 5 h at 400 °C under atmosphere ambient. X-ray diffraction results and Auger depth profiles show that the good PdGe-based ohmic contact is due to the formation of both AuGa and TiO compounds. The AuGa compound enhances the creation of more Ga vacancies, followed by the incorporation of Ge into Ga vacancies, and the TiO compound suppresses As outdiffusion from the GaAs substrate, respectively. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is proposed that the nucleation and growth of the amorphous phase through the solid-state amorphizing reaction in thin-film diffusion couples can be predicted by using the concept of effective driving force. The effective driving force consists of two factors: (i) the thermodynamic driving force given by maximum free-energy difference between the physical mixture of binary elements and the amorphous phase (ΔGmax), and (ii) the kinetic factor given by a ratio of the effective radius of the interstitial site in the host matrix to the atomic radius of the diffusing species (Rm/d). From the comparison of reported experimental results, it is shown that the criterion of effective driving force holds well for predicting the nucleation of the amorphous phase in metal/silicon systems as well as that of metal/metal systems. In addition, the concept of effective driving force holds well for predicting the growth tendency of the amorphous phase in metal/silicon systems. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5993-5999 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nucleation and growth of the Si0.5Ge0.5 alloy layer on Si (100) substrate during ion-beam-assisted deposition (IBAD) have been investigated by atomic force microscopy, reflection high-energy electron diffraction, transmission electron microscopy, and double-crystal rocking diffraction. We confirmed that Si0.5Ge0.5 nucleates on Si (100) via the Stranski–Krastanov (SK) mechanism by IBAD, and Ar-ion bombardment suppressed SK growth mode as well as improved crystalline perfection. The epitaxial temperature was observed at 200 °C, and it was much lower than the growth temperature (550–600 °C) in molecular-beam epitaxy (MBE). The χmin value (the ratio of channeling to random backscattering yields) was 10.5% lower than the obtained MBE value. The effect of ion bombardment on nucleation was explained as the result of ion-bombardment-induced dissociation of three-dimensional islands and enhanced surface diffusion, and appeared only at low deposition temperatures where the dissociation of three-dimensional islands is more favorable than the formation of those islands. © 1995 American Institute of Physics.
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial microstructures of Pd/Ge/Ti/Au ohmic contact to n-type GaAs have been investigated using cross-sectional transmission electron microscopy, and the results are used to interpret the electrical properties. Annealing at 300 °C yields a contact resistance of 0.62 Ω mm and the layer structure is changed to GaAs/PdGe/Au4Ti/TiO. The ohmic contact is formed through a solid phase regrowth of GaAs heavily doped with Ge below the PdGe layer. At 380 °C, the lowest contact resistance of 0.43 Ω mm is obtained. The layer structure is changed to GaAs/(Ge–Ti)/PdGe/TiO. Spikes composed of Au and AuGa are found at the grain boundaries of the PdGe compound. The formation of AuGa at 380 °C reduces the contact resistance through the creation of more Ga vacancies at the interface of GaAs/PdGe, and the incorporation of elemental Ge. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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