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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 2719-2721 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper presents a numerical study of two planar photodetector device designs, a heterojunction lateral p-i-n and a buried layer lateral p-i-n. The devices are planar structures comprised of interdigitated p+ and n+ wells containing either a heterojunction or buried charge sheet. Numerical simulation reveals that when pulsed with an 827 nm optical source at 0.68 mW/cm2, these two devices exhibited vastly superior frequency performance and responsivity compared to a heterostructure metal–semiconductor–metal photodetector formed with identical finger spacing and geometry. The calculated dark currents are similar in magnitude while the capacitances vary among the devices.© 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2047-2049 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quantitative analogies that have been established between electron wave propagation in semiconductors and optical wave propagation in dielectrics are used to demonstrate that high-resolution energy filters in semiconductors are possible. An example filter consisting of electron quarter-wavelength layers of GaAs and Ga0.55Al0.45As and a half-wavelength layer of GaAs is presented and theoretically analyzed. The pass electron energy is 0.139 eV and the passband is only 0.003 eV (2.2% of pass energy). Such a filter could be incorporated into semiconductor devices (e.g., as a hot-electron emitter in a ballistic transistor) or used to control free-space electron beams (e.g., in electron beam lithography).
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 276-278 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new device structure useful in detecting long-wavelength radiation which uses a variably spaced superlattice both to inject photogenerated electrons into a wider band-gap semiconductor and to promote efficient impact ionization and gain at low bias voltages is proposed. Both of these properties result directly from the unique property of the superlattice structure to create a near monoenergetic stream of electrons and inject them at high energy into an adjacent semiconducting layer. Thus for the first time it should be possible to obtain long-wavelength sensors with high gain (∼103), ultralow noise, and high detectivity.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1442-9993
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: The bird faunas of the adjacent Wessel and English Company island chains were sampled at two scales (0.25 ha quadrats and entire islands). Ninety-six species were recorded from 226 quadrats, with the most frequently recorded species being mistletoebird Dicaeum hirundinaceum, brown honeyeater Lichmera indistincta, silver-crowned friarbird Philemon argenticeps, bar-shouldered dove Geopelia humeralis, northern fantail Rhipidura rufiventris and yellow white-eye Zosterops lutea. At the quadrat scale, vegetation type was a major determinant of the abundance of individual species (and hence species composition), species richness and total bird abundance. Bird species composition and richness at the quadrat scale was also significantly affected by island isolation (particularly the amount of land within 20 km of the island perimeter). Island size had no effect on quadrat-scale richness or total abundance. However, the abundance of 10 of the 38 most frequently recorded individual species was significantly related to island size, in most cases even when the comparison was restricted to similar habitats. The most striking cases were rufous fantail Rhipidura rufifrons, mangrove golden whistler Pachycephala melanura, brown honeyeater and yellow white-eye, which were all significantly more abundant on smaller islands. One hundred and seventy-one species were recorded from the 62 islands sampled. There was a very tight relationship between island size and the number of terrestrial species (73% of deviance explained) and of all species (84% of deviance explained). This relationship was improved (marginally) when isolation was included in the model. Ordination of islands by their terrestrial bird species composition was related to island size and isolation, and suggested an erratic species composition on small islands.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Impedance transformers for ballistic (collisionless) electron waves traveling between dissimilar energy-gap semiconductors are designed as a series of quarter (electron) wavelength layers in the form of a compositional superlattice. The quantitative analogies that have been previously established [J. Appl. Phys. 65, 814 (1989)] between electron-wave propagation in semiconductors and electromagnetic-wave propagation in dielectrics are used. For the design energy, the electron wave would be totally transmitted and the structure is analogous to an antireflection coating in electromagnetic optics. Practical constraints on the impedance transformer layers are (1) their compositions must be within the usable compositional range and (2) their thicknesses must be integer multiples of a monolayer thickness. These constraints are included in the design process. Procedures for designing narrow-band, maximally flat (Butterworth), and equal-ripple (Chebyshev) impedance transformers of arbitrary spectral bandwidth are presented. Example practical single-layer and three-layer transformers for connecting GaAs and Ga0.8Al0.2As are presented.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1842-1848 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantum well in a semiconductor can act as a slab waveguide for electron waves in a manner analogous to the way a layered dielectric can act as a slab waveguide for electromagnetic waves (e.g., as commonly employed in integrated optics). In this work, the case of a general electron asymmetric slab waveguide (a quantum well comprised of three materials each with a different potential energy and a different effective mass) is analyzed and the conditions for electron waveguiding are quantified. Electron waveguide modes exist for electron energies in the well and for electron energies above one or both of the potential energy barriers. Furthermore, due to dispersion, each electron waveguide mode has an upper-energy cutoff as well as a lower-energy cutoff. This is in contrast to electromagnetic guided modes which typically have only lower-energy (low-frequency) cutoffs. At the upper-energy cutoff the electron wave is refracted into the substrate and/or cover. An example quantum well waveguide consisting of Ga0.80 Al0.20 As (substrate), GaAs (film), Ga0.55 Al0.45 As (cover) is analyzed. This structure is a single-mode electron waveguide for GaAs thicknesses of from 5 (1.413 nm) to 26 monolayers (7.349 nm).
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1641-1643 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a numerical study of a high speed GaAs lateral p-i-n (LPIN) photodiode. The LPIN is a planar structure composed of interdigitated p+ and n+ wells. A metal–semiconductor–metal (MSM) photodiode with identical finger spacing and geometry is simulated for comparison. When pulsed with an 827 nm optical source at 0.68 mW/cm2, the lateral p-i-n exhibited improved frequency performance and responsivity compared to the MSM. The dark current and capacitance are similar in magnitude between the two devices. Based on these results, it is concluded that a lateral p-i-n can be an attractive alternative to standard MSM photodetectors. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Surface Science Letters 174 (1986), S. A456 
    ISSN: 0167-2584
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Cancer Genetics and Cytogenetics 27 (1987), S. 161-165 
    ISSN: 0165-4608
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Medicine
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Surface Science 174 (1986), S. 514-518 
    ISSN: 0039-6028
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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