AIP Digital Archive
A material for thermally stable self-aligned silicide technologies has been developed using sequentially deposited Ti/Ta on polycrystalline silicon. At lower annealing temperatures below 1000 °C two separate phases were found by cross-sectional transmission electron microscopy to exist in the form of bilayer TiSi2/TaSi2. The formation of a ternary phase (TiTa)Si2 has been observed at a higher temperature of 1000 °C. Consequently, the ternary (TiTa)Si2 layer could be kept extremely flat, with a sheet resistance of 5 Ω/(D'Alembertian), even after 1000 °C, 30 min annealing. Cross-sectional transmission electron micrographs of the structure clearly reveal that no agglomeration occurs during the heat treatment.
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