AIP Digital Archive
Electrical Engineering, Measurement and Control Technology
In this article we describe a new ultrahigh vacuum compatible device to maximize the volatilization of low vapor-pressure precursors used in chemical vapor deposition processes while minimizing their dissociation. A differentially pumped system that places the precursor close to the target substrate was adopted to achieve this configuration; it also allows loading and unloading of the precursor reservoir without breaking vacuum. The device permits the volatilization of low vapor-pressure solid precursors by passing a preheated carrier gas through the precursor which is placed between two fritted disks. This device was also used without a carrier gas and proved its efficiency. The complexes (1,1,1,5,5,5-hexafluoropentanedionato)(1,5-cyclooctadiene) copper (I), [(hfac)Cu(COD)], and (1,1,1,2,2,3,3-heptafluoro-7, 7-dimethyl-4, 6-octanedionato) (trimethylphosphine) silver (I), [(fod)AgPMe3], proved the efficacy of this doser in delivering intact precursors to the substrate using reflection-absorption infrared spectroscopy and mass spectrometry techniques during the adsorption of these precursors on polished Al disks and on polyurethane thin films spun cast onto similar polished Al disks. © 1996 American Institute of Physics.
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