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  • 1
    ISSN: 1572-8986
    Keywords: Styrene ; oxidation ; silent discharge ; plasma ; dielectric barrier
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A silent discharge plasma reactor has been developed to study the oxidation of styrene vapor in argon/oxygen mixtures. A number of analytical techniques were employed to determine the destruction efficiency and to characterize the intermediate products. The destruction efficiency was measured as a function of initial styrene concentration, temperature, and energy density of the plasma. The formation of solid products was observed in most experiments. At low temperature (100°C), the solid deposit was polymeric in nature, while at high temperature (300°C) the solid appeared to be amorphous carbon. A combination of high temperature and high energy density resulted in high destruction efficiency and minimal production of solid films. The destruction efficiency vs. energy density is shown to be more complex than a simple model predicting exponential behavior. Several reasons for the discrepancy are suggested. The “e-folding” energy density for the destruction of styrene is compared to literature values for other organic compounds, measured using similar types of plasma reactors.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 6273-6280 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article presents results on the surface etching of a Novolak-type polymer (Shipley, SPR2) on Si wafers using dielectric barrier discharges in oxygen at high pressures and room temperature. The etching depth is measured by mechanical profilometry as a function of gap spacing and gas pressure. Figures of merit are generated allowing comparison with conventional plasma surface treatment, as etch rate per power density coupled onto the sample surface (nm J−1 cm2), or coupled into the gas volume (nm J−1 cm3). Energy-density specific etch rates were measured as a function of the gap spacing (d) and the total oxygen gas pressure (p), as well as a function of the product of pd in the gas pressure range of 50–1500 mbar and of the gap spacing range of 1–20 mm. At a constant gap spacing and pressure, the removal rate is a linear function of the applied power density. The highest achieved etching rate per surface energy density is 2.2 nm J−1 cm2 at 730 mbar and 1 mm (0.2 nm J−1 cm3) and the highest etching rate per volumetric energy density is 0.85 nm J−1 cm3 at 290 mbar and 7 mm (0.87 nm J−1 cm2). The surface of the etched photoresist is characterized using mechanical profilometry and scanning electron microscopy. The results obtained in this work suggest that dielectric barrier discharges can be an efficient, alternative plasma source for general surface processing, because they can provide nonthermal discharges also near atmospheric pressures and thereby eliminate the need of costly vacuum systems. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma destruction of toxins, and volatile organic compounds in particular, from gas streams is receiving increased attention as an energy efficient means to remediate those compounds. In this regard, remediation of trichloroethylene (TCE) in silent discharge plasmas has been experimentally and theoretically investigated. We found that TCE can be removed from Ar/O2 gas streams at atmospheric pressure with an energy efficiency of 15–20 ppm/(mJ/cm3), or 2–3 kW h kg−1. The majority of the Cl from TCE is converted to HCl, Cl2, and COCl2, which can be removed from the gas stream by a water bubbler. The destruction efficiency of TCE is smaller in humid mixtures compared to dry mixtures due to interception of reactive intermediates by OH radicals.
    Type of Medium: Electronic Resource
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