Springer Online Journal Archives 1860-2000
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Abstract Beveled cross-sections of semiconductors with inclination angles down to 0.25 min of arc have been produced with a special ion beam etching process. We applied this technique to the depth resolved characterization of GaAs/GaAlAs multiple quantum well structures by photoluminescence spectroscopy. The depth dependent incorporation of impurities during the growth of the first quantum well layers is clearly revealed.
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