AIP Digital Archive
Thin, silicon-rich tungsten silicide layers, deposited using the co-sputtering technique and annealed within the temperature range 750–950 °C, were investigated using the acoustic material signature technique, transmission electron microscopy, and the Rutherford backscattering technique. The effective elastic constants were determined from the dispersion curves calculated using a Tiersten model [J. Appl. Phys. 40, 2 (1969)] and fitted to the experimental dispersion data. It is shown that for the annealing temperatures used the elastic properties of thin silicide films are correlated with the annealing temperature-dependent content of the excess silicon present within the grain boundaries.
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