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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3034-3036 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated a microstrip three-pole bandpass filter with a fractional bandwidth of 5% at a center frequency of 10.5 GHz utilizing laser ablated high- Tc superconducting YBa2Cu3O7−δ thin films on LaAlO3 substrates. Microwave performance of the filter was carried out as a function of temperature. The filter exhibited low insertion losses of about 0.077 and 0.304 dB at 20 and 77 K, respectively. More than 15 dB in return losses was obtained at the same temperatures. Intermodulation distortion measurements were performed to evaluate power-handling capacity of the filter, which results from the nonlinear effects of surface resistance. Third-order intercept points were 68 dBm at 20 K and 58 dBm at 77 K. The nonlinear performance in the passband was also measured using a group delay method. The superconducting filter was compared with an equivalent gold filter which showed the insertion loss of more than 3.5 dB at 77 K. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A two-step rf plasma oxidation technique of an insulating layer has been performed to enhance electrical and structural properties of magnetic tunnel junction (MTJ) devices. Comparison was made by analyzing properties of the MTJ oxidized by conventional rf and two-step rf plasma oxidation methods. Experimentally observed results give improved surface imaging and sufficient oxygen contents of the insulating layer under the two-step oxidation method. In addition, electrical breakdown voltage and magnetoresistance of the MTJ were increased from 0.7 to 1.8 V and from 4.5% to 6.8%, respectively, correlated with improved structural information. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature superconducting mixers have been fabricated from epitaxial films of Tl2CaBa2Cu2O8 utilizing surface double step-edge junctions on LaAlO3 substrates. These mixers were integrated with spiral antenna structure designed for broadband millimeter wave coupling of the radiation into weak links. Under the optimum bias current condition heterodyne mixing of signals at W band (94 GHz) frequencies has been measured, and noise performance operating at V band (60 GHz) has been characterized both at liquid nitrogen and liquid helium temperatures. By using an etching technique, two orders of magnitude improvement in noise performance over the earlier results have been obtained. Strong mixing signals were achieved right up to Tc (102 K).
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Millimeter mixers have been fabricated from epitaxial films of Tl2CaBa2Cu2O8, using a bowtie antenna structure integrated with grain-boundary weak links that were deliberately formed during film growth. The bowtie antenna was utilized for broadband millimeter wave coupling of the radiation into the weak links. Heterodyne mixing of signals at both V band (55 GHz) and W band (94 GHz) frequencies, and subharmonic mixing at V has been observed at liquid nitrogen temperature for zero and finite bias voltage conditions. The dependence of the IF output on temperature, bias voltage, and millimeter wave signal power has been studied. Efficient mixing with bias voltage exhibited strong signals right up to Tc (101 K).
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microcrystalline silicon films have been prepared on indium-coated glass utilizing a layer-by-layer technique with a plasma-enhanced chemical-vapor deposition system. The microcrystalline films were fabricated by varying the number of cycles from 10 to 60 under a fixed H2 time (t2) of 120 s, where the corresponding deposition time (t1) of amorphous silicon thin film was 60 s. Structural properties, such as the crystalline volume fraction (Xc) and grain sizes were analyzed by using Raman spectroscopy and a scanning electron microscopy. The carrier transport was characterized by the temperature dependence of dark conductivity, giving rise to the calculation of activation energy (Ea). Optical energy gaps (Eg) were also investigated using an ultraviolet spectrophotometer. In addition, the process under different hydrogen plasma time (t2) at a fixed number of 20 cycles was extensively carried out to study the dominant role of hydrogen atoms in layer-by-layer deposition. Finally, the correlation between structural and electrical properties has been discussed on the basis of experimental results. © 2000 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 852-858 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the diffraction efficiency of a grating photoinduced by two perpendicular light vibrations in FA KCl:Li crystals at liquid-nitrogen temperature. We calculate the concentrations of centers parallel to each crystallographic axis after such an illumination. From these expressions, we derive the complex relative dielectric constants of the crystal. Finally, using the coupled-wave theory, we obtain a theoretical expression giving the diffraction efficiency. This expression is the sum of two terms: a term characterizing the amplitude contribution of the grating and a term characterizing the phase contribution of the grating. We show that for some wavelength of the visible spectrum, the diffraction efficiency of such a grating may be high enough in spite of the strong absorption of the crystal.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3592-3595 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric constant and loss tangent of SrTiO3 thin films were characterized under the influence of an applied dc voltage at about 3.64 GHz. The measurement was carried out utilizing a gold resonator with a flip-chip capacitor at cryogenic temperatures. The analysis of the experimentally observed capacitance and quality factor served to give a measure of the dielectric constants and the loss tangents of the SrTiO3 film at microwave ranges, respectively. A dielectric constant of 830 and a low loss tangent of 6×10−3 at 3.64 GHz were observed at 90 K and 100 V. The dielectric loss decreases as the bias voltage increases. In addition, the quality of the SrTiO3 film is presented in terms of fractional frequency under the bias voltages and cryogenic temperatures. © 2000 American Institute of Physics.
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