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  • 1
    ISSN: 1572-9559
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A novel metal-SiO2-InP MISFET (metal-insulator-semiconductor field effect transistor) structure is proposed. This device incorporates a modulation doped channel and the self-aligned gate feature of Si MOSFETs. The modulation doping provides very high electron mobility and the self-alignment of gate, source and drain provides high packing density. Analytical results on current-voltage and transconductance characteristics are presented. Significant enhancement in high frequency performance over conventional MISFETs, employing SiO2 as an insulator, is reported.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1572-9559
    Keywords: MODFET ; two-dimensional electron gas (2 DEG, HFET, unity-current gain cutoff frequency f T)
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A Modulation-Doped Field-Effect Transistor (MODFET) structure realized in InGaN-GaN material system is presented for the first time. An analytical model predicting the transport characteristics of the proposed MODFET structure is given in detail. Electron energy levels inside and outside the quantum well channel of the MODFET are evaluated. The two-dimensional electron gas (2DEG) density in the channel is calculated by self-consistently solving Schrödinger and Poisson's equations simultaneously. Analytical results of the current-voltage and transconductance characteristics are presented. The unity-current gain cutoff frequency (f T) of the proposed device is computed as a function of the gate voltage V G . The results are compared well with experimental f T value of a GaN/AlGaN HFET device. By scaling the gate length down to 0.25 μm the proposed InGaN-GaN MODFET can be operated up to about 80GHz. It is shown in this paper that InGaN-GaN system has small degradation in f T as the operating temperature is increased from 300°K to 400°K.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1572-9559
    Keywords: MODFET ; MOSFET ; two-dimensional electron gas (2 DEG) ; unity-current gain cutoff frequency (fT) ; Quantum Well Wire (QWW)
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract This paper describes a self-aligned SiGe MOS-gate field-effect transistor (FET) having a modulation-doped (MOD) quantum wire channel. An analytical model based on modified charge control equations accounting for the quantum wire channel, is presented predicting the transport characteristics of the MOS-gate MODFET structure. In particular, transport characteristics of devices having strained SiGe layers, realized on Si or Ge substrates, are computed. The transconductance gm and unity-current gain cutoff frequency (fT) are also computed as a function of the gate voltage VG. The calculated values of fT suggest the operation of one-dimensional SiGe MODFETs to be around 200 GHz range at 77°K, and 120 GHz at 300°K.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1572-9559
    Keywords: Quantum Interference Transistor (QUIT) ; quantum interference ; MODFET ; unity current-gain cut-off frequency (f T) ; Aharonov-Bohm Effect
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A high performance quantum interference transistor (QUIT) realized using high mobility 1-D MODFET channels is presented. The operation of this 1-D QUIT is based on electrostatic Aharonov-Bohm quantum interference effect. The channel length of the device is smaller than the inelastic coherence length of the electrons in the quantum well wire channel, otherwise scattering will randomize electron's phase and destroy the quantum interference effect. Transport characteristics of the 0.2 μm channel 1-D QUIT are calculated at 4.2 °K and compared with a two-dimensional QUIT device reported in literature. Our calculations show a significant improvement of the transconductance in one-dimensional transistors compared with its two-dimensional counterpart. The maximum frequency of operation of the 1-D QUIT is in the Tera Hertz regime, which makes it very attractive device for high frequency applications.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1572-9559
    Keywords: Submillimeter MODFET ; Quantum Wire MODFET ; InGaAs MODFET ; CoupledWell MODFET
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A coupled-well InAlAs/InGaAs quantum wire MODFET structure is proposed, for which simulations predict improved frequency performance (〉500 GHz), over a wider range of Vg, as compared to well/wire devices with a standard MODFET heterointerface. A comparison of several transverse potential well profiles, obtained by varying the placement of a thin barrier within a 100 Å finite well, is presented. In all cases, the quantum wires consist of a 0.1 μm long channel and a 150 Å finite-square-well lateral profile. It has been found that the peak of the electron distribution for the first confined state, as measured from the heterointerface, changes dramatically depending on the location of the thin barrier. For quantum wire structures, realized in the lattice matched system of In0.52Al0.48As/In0.53Ga0.47As/InP, a change in the barrier location of 25 Å is accompanied by a shift in the carrier peak of more than 40 Å (~20 Å closer to or farther from the spacer-well interface than in the standard MODFET profile). Implications of this are reflected in the current-voltage characteristics (Id-Vd) and frequency responses (fT-Vg) of the proposed structures.
    Type of Medium: Electronic Resource
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