Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Proceed order?

Export
  • 1
    ISSN: 0378-1119
    Keywords: Recombinant DNA ; S1 mapping ; gene expression ; in vitro transcription and translation ; pre-proenzyme ; secretion ; signal sequence ; zinc-binding region
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology
    Type of Medium: Electronic Resource
    Signatur Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3399-3401 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The successful growth of ultrathin CoGa on GaAs by MBE is demonstrated. The crystalline quality of the films is verified by in situ RHEED, RBS, and x-ray rocking curve. Transport studies are performed in the temperature range of 4 to 300 K for layer thickness from 10 to 730 A(ring), and all the films are found to be electrically continuous. The Markowitz's model [Phys. Rev. B 15, 3617 (1977)] of the electrical resistivity is applied to analyze the measured data. Finally, the specularly scattering probability of these thin films is studied using Fuchs' theory [Proc. Cambridge Philos. Soc. 34, 100 (1938)].
    Type of Medium: Electronic Resource
    Signatur Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1062-1064 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A scanning tunneling microscope (STM) was used for the first time to investigate the (100)CoGa/GaAs interfaces grown by molecular beam epitaxy. The surface image indicates a vertical variation of about 7.5 A(ring) with some domains of dimensions of about 170 A(ring). Furthermore, ballistic-electron-emission-microscopy spectra of this metal/semiconductor interface show two turn-on voltages, which account for the change of transmission probabilities for electrons with energies above the L minima and X minima of GaAs, respectively. The transmission into the X valleys of GaAs is found to be relatively stronger than that into the L valleys. This is explained by the CoGa band structure and the conservation of energy and transverse momentum for ballistically injected electrons. So far no ballistic electron current flowing into the Γ valley has been observed. For this reason, Schottky barrier height and its spatial variation measured by STM were not directly from the anticipated turn-on voltage at the Γ minimum, but instead, from the thresholds corresponding to transmission into higher valleys.
    Type of Medium: Electronic Resource
    Signatur Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 2304-2306 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We report here the design, fabrication, and testing of an integrated thermocouple gauge. The gauge uses a thin-film Cr heater and a thin-film Cu–Cr differential thermocouple on a 5-×3-mm glass substrate. The thermocouple measures the difference between the heater and the substrate temperature. Calibration of the thin-film Cu–Cr thermocouple gauge was done by using a standard K-type thermocouple as reference. At a constant difference temperature the measured power input to the heater is a function of the surrounding vapor pressure. The thermocouple gauge was calibrated using a McLeod gauge with He, Ar, N2, H2O, and CO2 gases. Our measurements show that the range of the gauge can possibly be extended to the μTorr range. This gauge uses a standard thin-film processing technique for fabrication resulting in a lower cost of production. Also, small size makes this gauge versatile and unique in comparison to many commercial gauges.
    Type of Medium: Electronic Resource
    Signatur Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1191-1193 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky barrier heights in the epitaxial (100) CoGa/n-(100) GaAs diodes were studied by the I-V and internal photoemission methods. Diodes of these epitaxial contacts were shown to exhibit good rectifying behaviors and the forward current was found to follow the thermionic emission theory. Using the temperature dependence of the barrier heights, we show that the Schottky barrier heights are about 0.67 eV by I-V and 0.68 eV by internal photoemission measurements. The Schottky barrier height was found to be constant for contacting to n-type GaAs in the temperature range between 150 and 300 K. From this fact, we conclude that the metal Fermi level is pinned relatively to the GaAs conduction band minimum in this case. This finding is similar to other epitaxial contacting cases, CoSi2/Si and ErSi2/Si, where the Fermi level pins to the nearest semiconductor band [J. Y. Duboz, P. A. Badoz, F. Arnaud d'Avitaya, and E. Rosenche, Phys. Rev. B 40, 10 607 (1989)].
    Type of Medium: Electronic Resource
    Signatur Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3199-3201 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intersubband transitions in modulation doped, arbitrary potential profile quantum-well structures under an applied field are analyzed by solving the Schrödinger and Poisson equations self-consistently. This analysis is applied to the local-to-global transitions of a step well structure. The results show that although the band-bending effect is significant (∼25 meV) at a relatively high carrier density of 5.6×1011 /cm2 (∼3×1017 /cm3 ), the transition energies and absorption coefficients remain close to the flat band cases. This calculation confirms that the local-to-global transitions have large linear Stark shift and oscillator strength even at high doping.
    Type of Medium: Electronic Resource
    Signatur Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2869-2871 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Schottky barrier formation of CoGa on (100)n-GaAs is investigated. CoGa is grown by molecular beam epitaxy and the epitaxial orientation is controlled by the initial growth conditions of the GaAs substrate. Schottky diodes with three different phases of CoGa: (100)CoGa, (110)CoGa, and mixed (100) and (110)CoGa, are fabricated and Schottky barrier heights are measured by I-V, C-V, and internal photoemission. The fact that these three types of diodes have different values of barrier height indicates that the mechanisms of the barrier formation for these three phases are different. Finally, the temperature dependence of the Schottky barrier height is also examined and the barrier height is found to be constant from 150 to 300 K for each of the phases.
    Type of Medium: Electronic Resource
    Signatur Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...