Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7984-7985 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Kaiblinger-Grujin, Kosina, and Selberherr [J. Appl. Phys. 83, 3096 (1998)] have proposed an explanation for the dependence of the electron mobility in n-type silicon on the doping element. We point out that their model presents some questionable aspects: The macroscopic dielectric constant is used even inside the impurity core, screening by valence electrons is double counted, and the distribution of the valence electrons around the impurity is assumed to be isotropic. We modify the model and find that the dependence on the doping element becomes too weak to explain the experimental results. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    Signatur Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1058-1087 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results of a Monte Carlo study of carrier multiplication in silicon bipolar and field-effect transistors and of electron injection into silicon dioxide are presented. Qualitative and, in most cases, quantitative agreement is obtained only by accounting for the correct band structure, all relevant scattering processes (phonons, Coulomb, impact ionization), and the highly nonlocal properties of electron transport in small silicon devices. In addition, it is shown that quantization effects in inversion layers cause a shift of the threshold energy for impact ionization which is very significant for the calculation of the substrate current in field-effect transistors. Conservation of parallel momentum, image-force corrections, dynamic screening of the interparticle Coulomb interaction, and improvements to the WKB approximation are necessary to treat correctly the injection of electrons from silicon into silicon dioxide. The validity of models—analytic or Monte Carlo—which treat hot-electron transport with oversimplified physical approximations is argued against. In a few words, there is no shortcut. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Signatur Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2234-2252 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using nonlocal empirical pseudopotentials, we compute the band structure and shear deformation potentials of strained Si, Ge, and SiGe alloys. Fitting the theoretical results to experimental data on the phonon-limited carrier mobilities in bulk Si and Ge, the dilatation deformation potential Xid is found to be 1.1 eV for the Si Δ minima, −4.4 eV for the Ge L minima, corresponding to a value for the valence band dilatation deformation potential a of approximately 2 eV for both Si and Ge. The optical deformation potential d0 is found to be 41.45 and 41.75 eV for Si and Ge, respectively. Carrier mobilities in strained Si and Ge are then evaluated. The results show a large enhancement of the hole mobility for both tensile and compressive strain along the [001] direction, but only a modest enhancement (approximately 60%) of the electron mobility for tensile biaxial strain in Si. Finally, from a fit to carrier mobilities in relaxed SiGe alloys, the effective alloy scattering potential is determined to be about 0.7 eV for electrons, 0.9±0.1 eV for holes, and the low-field mobilities in strained alloys can be evaluated. The results show that alloy scattering completely cancels any gain expected from the lifting of the valleys/bands degeneracy caused by the strain. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Signatur Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1205-1231 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the ever smaller silicon metal–oxide–semiconductor field-effect transistors of the present technology, electrons in the conductive channel are subject to increasingly stronger long-range Coulomb interactions with high-density electron gases present in the source, drain, and gate regions. We first discuss how two-dimensional, self-consistent full-band Monte Carlo/Poisson simulations can be tailored to reproduce correctly the semiclassical behavior of a high-density electron gas. We then employ these simulations to show that for devices with channel lengths shorter than about 40 nm and oxides thinner than about 2.5 nm, the long-range Coulomb interactions cause a significant reduction of the electron velocity, and so a degradation of the performance of the devices. In addition, the strong "thermalization" of the hot-electron energy distribution induced by Coulomb interactions has an effect on the expected reliability of the transistors. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Signatur Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2277-2279 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In small silicon devices, conduction electrons in the channel are subject to long-range Coulomb interactions with electrons in the heavily doped drain, source, and gate regions. We show that, for devices with channel lengths shorter than about 40 nm and oxides thinner than 2.5 nm, these interactions cause a reduction of the electron velocity. We present results obtained using both semiclassical two-dimensional self-consistent Monte Carlo/Poisson simulations and a quantum-mechanical model based on electron scattering from gate–oxide interface plasmons. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Signatur Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    Weinheim : Wiley-Blackwell
    Chemie Ingenieur Technik - CIT 65 (1993), S. 1106-1107 
    ISSN: 0009-286X
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    Signatur Availability
    BibTip Others were also interested in ...
  • 7
    facet.materialart.
    facet.materialart.
    German Medical Science GMS Publishing House; Düsseldorf
    In:  37. Jahrestagung der Deutschsprachigen Arbeitsgemeinschaft für Verbrennungsbehandlung (DAV 2019); 20190109-20190112; Schladming, Österreich; DOC55 /20190108/
    Publication Date: 2019-01-09
    Keywords: ddc: 610
    Language: German
    Type: conferenceObject
    Signatur Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...