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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2505-2508 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sandwiched structures that consist of ZnSTe/ZnSTe:Al/ZnSTe were fabricated by the molecular beam epitaxy technique on three GaAs substrates oriented along (100), (511), and (711), respectively, to study the thermal diffusion of Al dopant in ZnS0.986Te0.014 matrix by secondary ion mass spectroscopy depth profiling. The relative sensitivity factor of Al respect to Zn was determined to be 4.5±0.5×1019 cm−3. The Al diffusion coefficients at annealing temperature of 450 and 550 °C were found to be dependent on Al concentration. The upper and lower limits of the diffusion coefficients were obtained through a data fitting program based on Fick's second law, the results suggest that the diffusion is anisotropic possibly due to channeling effect. The results also reveal that Al in the matrix is thermally stable at temperature as high as 300 °C and thus prove that Al is a good candidate for the n-type doping of ZnSTe alloy system in terms of thermal stability. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2251-2253 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSTe-based Schottky barrier photovoltaic detector arrays were fabricated on GaP(100) using a two-step molecular beam epitaxy growth approach. These detectors exhibit visible blind and ultraviolet (UV) sensitive response with a peak UV responsivity of 0.13 A/W and 1.2×106 V/W at 320 nm. The built-in potential of these detectors was determined to be 1.7 V. The temporal photocurrent response of a 400×400 μm2 detector was measured to be 1.2 ns, limited apparently by the resistance-capacitance (rc) constant of the detector structure. © 1998 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3847-3849 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnS1−xTex-based Schottky photodiodes have been fabricated on various substrates using the molecular beam epitaxy technique. The photovoltage output of these photovoltaic devices is determined using Fourier transform interferometric spectroscopy. The results show that these devices (with Te〈10%) are highly sensitive in the ultraviolet but are visible blind. An external quantum efficiency of over 50% has been achieved on a device grown on a GaP substrate and over 40% on a Si substrate. © 1997 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1098-1100 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature dependence, up to 150 °C, of the photoresponsivity of ZnS, ZnSTe, and ZnSSe photodiodes was investigated in this study. It was found that, in general, the responsivity at higher temperatures will shift to longer wavelengths because of band-gap narrowing. A remarkable observation is that the near-band-edge responsivities of these diodes increase at higher temperature. We believe that this observation is attributed to the change of the density-of-state distribution due to lattice expansion at high temperatures, and a simplified model is used to illustrate this hypothesis. © 2000 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1340-1342 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe self-organized dot structures on ZnS thin films were fabricated by the molecular beam epitaxy technique. In situ reflection high-energy electron diffraction studies reveal that growth interruption is required for the formation of the dot structure. Atomic force microscopy (AFM) images of the dots taken within the same day of growth reveal that the dot density increases with increasing ZnSe coverage. A density of 18 μm−2 was achieved with a coverage of 8.0 ZnSe monolayers. AFM images taken at later times (up to six months later) show ripening effects. The average dot size measured at various times after growth is consistent with the prediction of the Ostwald ripening model with a growth time constant of 4±1 days for the structure with a coverage of 8.0 ZnSe monolayers. The dot size and density in the fully ripened state are essentially independent of the initial ZnSe coverage. © 1998 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2519-2521 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Successful n-type doping of ZnSTe alloy using elemental aluminum source has been carried out by molecular beam epitaxy. Hall effect measurement (300–77 K) was performed on as-grown ZnS0.977Te0.023 epilayers with various dopant concentrations. Electron carrier concentration as high as 1.3×1019 cm−3 has been achieved. For carrier concentration higher than 5×1018 cm−3, the carrier concentration is independent of temperature, possibly indicating formation of a very shallow donor level. A group of ZnS1−xTex epilayers with different x values was doped using a constant aluminum beam flux for studying the dependence of the dopant activation on Te composition. Good activation of Al dopant was obtained for x value from 0 to a few percent, but it became poor for larger x value and finally Al became inactive for x values higher than 10%. Room temperature photoluminescence measurements on doped and undoped ZnS and ZnS1−xTex layers indicate that Al dopants form deep-level radiative centers in addition to a shallow donor level. The characteristics of these deep levels as a function of Te composition have also been studied. © 1996 American Institute of Physics.
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  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Capacitance–voltage, photoluminescence (PL), and deep level transient spectroscopy techniques were used to investigate deep electron states in n-type Al-doped ZnS1−xTex epilayers grown by molecular beam epitaxy. The integrated intensity of the PL spectra obtained from Al-doped ZnS0.977Te0.023 is lower than that of undoped ZnS0.977Te0.023, indicating that some of the Al atoms form nonradiative deep traps. Deep level transient Fourier spectroscopy (DLTFS) spectra of the Al-doped ZnS1−xTex (x=0, 0.017, 0.04, and 0.046, respectively) epilayers reveal that Al doping leads to the formation of two electron traps 0.21 and 0.39 eV below the conduction band. DLTFS results suggest that in addition to the roles of Te as a component of the alloy as well as isoelectronic centers, Te is also involved in the formation of an electron trap, whose energy level with respect to the conduction band decreases as Te composition increases. Our results show that only a small fraction of Al atoms forms nonradiative deep defects, indicating clearly that Al is indeed a very good donor impurity for ZnS1−xTex epilayers in the range of Te composition being studied in this work. © 1997 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3707-3709 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work focuses on the investigation of the difference between the photoresponse of ZnS, ZnSSe, and that of ZnSTe Schottky-barrier photodiodes, with a particular aim to reveal the underlying causes of the gradual turn-on characteristic of low-Te-containing ZnSTe Schottky barrier photodiodes. To form the bottom electrode layer for the newly developed ZnSSe diode, n-type doping of ZnSSe by incorporating Al flux during molecular beam epitaxial growth was studied. Excellent-to-good dopant activation is achieved for Se composition up to 50%. The measured photoresponse of the diodes clearly indicates that the Te isoelectronic trapping effect is responsible for the gradual turn-on characteristic of low-Te-containing ZnSTe Schottky-barrier photodiodes. The results also reveal that the ZnSSe diode, having a much better visible rejection power, is a more suitable choice for high-performance visible–blind ultraviolet detection applications. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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