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  • 1
    ISSN: 1432-0630
    Keywords: 68.55 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The formation of palladium silicide Pd2Si by rapid thermal annealing of Pd layers on silicon has been studied as a function of annealing time (1–60s) in the temperature range 350–500 °C. It is shown that the results found for conventional furnace annealing (long duration, low temperature) can be extrapolated for rapid thermal annealing (shorter time, higher temperature) when taking into account the exact time dependence of the short temperature cycle. The growth rate is essentially diffusion limited and the activation energy is close to 1.1±0.1 eV. Silicide resistivity of about 30–40 Ω cm was obtained for 200–400 nm thick Pd2Si layers formed at 400 °C for a few seconds.
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  • 2
    ISSN: 1432-0630
    Keywords: 68.55 ; 81.10 ; 73.40 Cg
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Titanium silcides have been formed on monocrystalline (111) silicon substrates by rapid thermal annealing (RTA) of Ti layers deposited on Si at 700–800 °C for 1 to 240 s. The phase composition is dependent on the annealing temperature and time: at 700° and 750 °C for short annealing, TiSi and TiSi2 are observed. At 800 °C and by increasing the exposure time at 700 ° and 750 °C, only TiSi2 is detected. The growth of the total silicide thickness is found to be faster for RTA than for conventional furnace annealing and governed by two different mechanisms depending on the phases formed: in the range 700–750 °C, and 750–800 °C, activation-energy values of 2.6 ± 0.2 and 1.5 ±0.2 eV are found, respectively. For a thin deposited Ti layer (〈 100 nm), the whole Ti is finally transformed into TiSi2 with 20@ μω cm resistivity. For thicker Ti thicknesses, titanium oxide stops the reaction.
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 27 (1982), S. 11-17 
    ISSN: 1432-0630
    Keywords: 73.30+y ; 78.20Dj
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Optical and electrical properties of lapped, mechanically polished, and etched cadmium telluride surfaces have been studied by ellipsometry, infrared transmission, reflectivity, and sheet resistance measurements. They have been related to the characteristics of Schottky barriers realized by deposition of gold on these surfaces. These experiments indicate that the electrical behaviour of devices made of cadmium telluride critically depends on the surface damages produced during the sample preparation: while good diodes can be made when bromine in methanol etching is used, lapping and polishing produce a disturbed layer of poor electrical and optical properties whose thickness is related to the size of the abrasive powder used during the preparation.
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 43 (1987), S. 301-304 
    ISSN: 1432-0630
    Keywords: 68.55 ; 78.30 ; 3.40 Q
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ultrathin gate oxides (90–300 Å) have been grown on silicon under dry oxygen using a lamp light heater. The oxidation kinetics is quite different from that expected in conventional furnace oxidation since the process is shown to be diffusion limited. Infrared absorption analysis shows neither shift nor broadening of the Si-O stretching mode, indicating that the rapid oxide is stoichiometric with a good structural order. The electrical characteristics of Al-gate capacitors assessed byC-V andG-V measurements with thickness as parameter shows a good quality for oxide films thinner than 100 Å. For thicknesses higher than this value, cleaning techniques and post-oxidation annealing must be used.
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  • 5
    ISSN: 1432-0630
    Keywords: 61.70Wp ; 68.60+q ; 81.40G
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The reaction during rapid thermal annealing of the Ti-Si couple with arsenic implanted either into titanium or into silicon has been investigated from the point of view of suicide formation kinetics and impurity redistribution. In contrast with similar experiments on other refractory metals, tungsten for example, the reaction is not blocked by the presence of arsenic but a temperature and dose dependent impurity effect leading to a lowering of the growth rate of the disilicide phase is observed. This has been attributed to arsenic segregation in the grain boundaries of the growing suicide which reduces the transport of silicon via easy diffusion paths towards the unreacted metal or a metal rich suicide phase. Arsenic, when present in the metal, has been found to produce the same effects as oxygen at the early beginning of the annealing. However, after the reaction has started the respective behaviour and influence of arsenic and oxygen become completely different.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4319-4321 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sputtered titanium thin films on 〈100〉 Si wafers were exposed to rapid thermal annealing (RTA) in argon at temperatures of 600–900 °C. Auger depth profiling shows that when exposed to air the Ti films takes in 3×1016 oxygen atoms cm−2 independently of Ti thickness. During RTA the oxygen tends to redistribute uniformly and a snowplow effect, due to the O solubility difference between Ti and TiSi2, confines it to the unreacted titanium layer. Early on, silicon is observed at the Ti surface and a second silicide layer starts growing. All of the oxygen is finally fixed in the C54 TiSi2 where the two silicide fronts meet (at around 50 nm from the surface). This reproducible effect is associated with RTA and is not observed in classical furnace annealing.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3921-3923 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid thermal heating of silicon samples in a dry O2 ambient has been used to form thin SiO2 films. Compared to conventional furnace oxidation, an increased growth rate was observed which is linearly dependent on the square root of time. Activation energies of 1.99 and 2.26 eV for 〈111〉 and 〈100〉 orientation, respectively, have been determined in the range 1000–1200 °C.
    Type of Medium: Electronic Resource
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