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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 528-530 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that part of the resonance feature at 2.7 eV in the reflectance difference (RD) spectra of ZnSe thin film grown on (100) GaAs substrate [Z. Yang, I. K. Sou, Y. H. Yeung, G. K. L. Wong, J. Wang, C. Jin, and X. Hou, J. Vac. Sci. Technol. B 14, 2973 (1996)] can be suppressed by a beam of monochromatic light below the ZnSe band gap. This light-sensitive part of the resonance contains contributions from at least two anisotropic interface electron traps near the conduction band edge of ZnSe that have distinctly different photocarrier release characteristics. Each state releases the captured electrons through more than one channel. Our results reconfirm that at least part of the RD resonance feature at 2.7 eV is due to the electronic transitions involving anisotropic interface states. © 1999 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3663-3665 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved reflectance difference spectroscopy (TRDS) has been applied to study the dynamics and relaxation processes of the 2.7 eV ZnSe/GaAs interface state associated with Zn–As bonds. The instantaneous screening due to the photoexcited carriers and ∼18 ps recovery time of the 2.7 eV interface state is observed in the TRDS spectra. The rapid cooling of the hot carrier in the spectral region above the ZnSe band edge is also observed. © 1999 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2235-2237 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Small angle reflectance difference spectroscopy (RDS) has been employed to study the interface states of ZnSe/GaAs heterojunctions. A sharp resonance of ΔR/R near 2.70 eV is observed. The resonance is due to the crossover electronic transition from the valence band of ZnSe to the quantum well states of the heterojunction, as is confirmed by two-photon second harmonic generation spectra. The resonance persists even when the thickness of the ZnSe layer is beyond the critical thickness, suggesting that the interface remains largely intact after strain relaxation. The advantages of small angle RDS in studying buried heterojunctions over other techniques are discussed. © 1995 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1915-1917 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnS1−xTex (0≤x≤1) single-crystal alloy films were grown on GaAs and Si substrates by molecular beam epitaxy. Strong photoluminescence in the yellow to blue light region, with room-temperature external quantum efficiencies of 2%–4% at an unoptimized excitation wavelength of 365 nm, was observed. The enhancement of luminescence was attributed to the presence of Te isoelectronic hole traps in the films. Strong bowing of the band-gap energy as a function of composition x was also observed, with the minimum near x=0.7. The line width as well as the Stokes shift of the luminescence peak from the band edge were found to increase as Te composition decreases. © 1995 American Institute of Physics.
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  • 5
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In-doped HgCdTe films have been grown by molecular beam epitaxy (MBE) on CdTe substrates in the (100) crystallographic orientation. They were characterized by Hall and secondary-ion mass spectroscopy measurements. The results are compared with those of In-doped HgCdTe layers grown in the (111)B orientation. In the (111)B orientation indium is incorporated in the metal site whereas in the (100) orientation it appears that indium is mainly incorporated interstitially. The results agree with a Te antisite model as a possibility for explaining the electrical behavior of (100) HgCdTe grown by MBE.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2518-2520 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel microstructure of an A1BA2-type ZnSTe/ZnSe quantum structure has been investigated by high-resolution x-ray two-axis diffraction, reflectivity, and x-ray topography which offer a nondestructive, high-strain-sensitive method for analyzing low-dimensional structures. The results show that the molecular-beam-epitaxy growth condition was well controlled to suppress dislocations extending from the substrate and the epitaxial layers have high crystalline quality. The ZnS0.665Te0.335 epilayer undergoes a tensile strain with εT(parallel)=2.5633×10−2 and εT⊥=8.8254×10−2 while a compressed strain with εB(parallel)=2.7864×10−3 and εB⊥=9.5061×10−3 exists in the first layer of ZnSe. The interfacial roughness is about 5 A(ring) and the lateral correlation length ≥2000 A(ring). © 1996 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1811-1813 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of Zn1−xMgxS alloy thin films on GaP(100) substrates was carried out using the molecular-beam-epitaxy technique. In situ reflection high-energy electron diffraction studies show that the alloys can be grown with a stable zinc-blende structure up to x around 30%. For x〉30%, a structural transition will occur at a critical thickness which is sensitively dependent on the x composition. A near-band-edge peak with a full width at half maximum of about 10 nm was observed in room-temperature photoluminescence measurements made on as-grown alloy thin films. Several Zn1−xMgxS-based Schottky barrier photodetectors were fabricated. Room-temperature photoresponse measurements were performed on these detectors and abrupt long-wavelength cutoffs covering 325, 305, 295, and 270 nm were achieved for devices with Mg composition of 16%, 44%, 57%, and 75%, respectively. The response curve of the Zn0.43Mg0.57S device offers a close match to the erythemal action spectrum that describes human skin sensitivity to UV radiation. © 2001 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2251-2253 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSTe-based Schottky barrier photovoltaic detector arrays were fabricated on GaP(100) using a two-step molecular beam epitaxy growth approach. These detectors exhibit visible blind and ultraviolet (UV) sensitive response with a peak UV responsivity of 0.13 A/W and 1.2×106 V/W at 320 nm. The built-in potential of these detectors was determined to be 1.7 V. The temporal photocurrent response of a 400×400 μm2 detector was measured to be 1.2 ns, limited apparently by the resistance-capacitance (rc) constant of the detector structure. © 1998 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3847-3849 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnS1−xTex-based Schottky photodiodes have been fabricated on various substrates using the molecular beam epitaxy technique. The photovoltage output of these photovoltaic devices is determined using Fourier transform interferometric spectroscopy. The results show that these devices (with Te〈10%) are highly sensitive in the ultraviolet but are visible blind. An external quantum efficiency of over 50% has been achieved on a device grown on a GaP substrate and over 40% on a Si substrate. © 1997 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1098-1100 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature dependence, up to 150 °C, of the photoresponsivity of ZnS, ZnSTe, and ZnSSe photodiodes was investigated in this study. It was found that, in general, the responsivity at higher temperatures will shift to longer wavelengths because of band-gap narrowing. A remarkable observation is that the near-band-edge responsivities of these diodes increase at higher temperature. We believe that this observation is attributed to the change of the density-of-state distribution due to lattice expansion at high temperatures, and a simplified model is used to illustrate this hypothesis. © 2000 American Institute of Physics.
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