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Heteroepitaxial growth of InSb was performed on Si(111)–(7×7) and Si(111)–In(4×1) surface phases over a wide temperature range, by optimizing the growth rate and substrate temperature. When the heteroepitaxy was performed on the Si(111)–In(4×1) surface, the In(4×1) reconstruction modified the growth process depending on the growth temperature. At low temperatures, the In(4×1) reconstruction contributes mildly to the growth, and as the growth temperature increases, it starts degrading the quality of the films. For temperatures above 300 °C, the In(4×1) reconstruction virtually destroys the growth. In the present article, we illustrate this behavior using the growth of InSb on both Si(111)–(7×7) and Si(111)–In(4×1) surfaces at 210, 250, and 300 °C. Based on reflection high-energy electron diffraction observations, we discuss the initial stages of growth. A model for the interface formation is proposed based on our earlier results suggesting the temperature-dependent modification of In-induced surface phases on Si(001) and Si(111) surfaces during Sb deposition. © 2000 American Institute of Physics.
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