ZnSe/ZnSxSe1 - x heterostructures
Polymer and Materials Science
Wiley InterScience Backfile Collection 1832-2000
Electrical Engineering, Measurement and Control Technology
Optically pumped stimulated emission in ZnSe/ZnSxSe1 - x heterostructures grown by MOVPE has been observed up to 170 K. Gain measurements have been performed using the variable stripe length method. The underlying gain mechanism at 25 K is atributed to an excitonexciton scattering process. Photoluminescence excitation spectra and the temporal evolution of the luminescence indicate a transfer process from the ZnSxSe1 - x barrier into the ZnSe active layer.
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