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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate selenium and silicon delta-doping characteristics for GaAs layers grown by atmospheric pressure metalorganic chemical vapor deposition. Broadened capacitance-voltage (C-V) profiles and low doping activities are found in case of Se delta doping. In contrast, excellent delta-doping characteristics result for silicon. The obtained C-V full width at half maximum are in the range of 44–49 A(ring) for samples even with substrate temperatures of 700–750 °C, which are relatively high compared with the molecular-beam epitaxy (MBE) substrate temperature. Hall mobility measurements show the mobility enhancement due to a screening of impurity charges. Also, Shubnikov–de Haas oscillations demonstrate the two-dimensional nature of electrons confined in the delta-doped layers. Therefore, our delta-doped layers show no substantial differences in quality with MBE-grown delta-doped layers. In addition, preliminary delta field-effect transistors having a gate length of 1.5 μm and a gate width of 300 μm are fabricated.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shubnikov–de Haas (SdH) and van der Pauw Hall effect measurements on In0.52Al0.48As/InxGa1−xAs coupled double quantum wells grown by metalorganic chemical vapor deposition have been carried out to investigate the magnetotransport properties of an electron gas and to determine the subband energies and wave functions in the coupled quantum wells. Transmission electron microscopy measurements showed that In0.8Ga0.2As and In0.53Ga0.47As quantum wells were separated by an In0.25Ga0.75As potential barrier in an active region. The SdH measurements at 1.5 K demonstrated clearly the existence of a quasi-two-dimensional electron gas in the quantum wells. The fast Fourier transformation results for the SdH data clearly indicate the occupation of three subbands in the In0.52Al0.48As/InxGa1−xAs coupled quantum wells. Electron subband energies and wave functions in the quantum wells were calculated by a self-consistent method taking into account exchange-correlation effects. The first and second excited subband wave functions in the asymmetric quantum well are strongly coupled over both In0.8Ga0.2As and In0.53Ga0.47As wells. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shubnikov–de Haas (SdH), Van der Pauw Hall-effect, and cyclotron resonance measurements on InxGa1−xAs/In0.52Al0.48As asymmetric step quantum wells were carried out to investigate the electrical properties of a free electron gas and to determine the effective mass of the electron gas, the subband energies, and the wave functions in the InxGa1−xAs quantum wells. The SdH measurements at 1.5 K demonstrated clearly the existence of a quasi-two-dimensional electron gas in the InxGa1−xAs quantum wells, and the fast Fourier transformation results for the SdH data indicated clearly the occupation by that gas of two subbands in the quantum wells. The electronic effective masses determined from the slopes of the main peak absorption energies as a function of the magnetic field were 0.0477 and 0.053 me for the first excited and the ground subbands, respectively. The electronic subband energies and the wave functions in the InxGa1−xAs/In0.52Al0.48As step quantum wells were calculated by a self-consistent method taking into account exchange-correlation effects together with the strain and nonparabolicity effects. The results of the cyclotron resonance measurements qualitatively satisfied the nonparabolicity effects of the step quantum well. These results can help improve understanding for the application of InxGa1−xAs/In0.52Al0.48As step quantum wells in optoelectronic devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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