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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2195-2197 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si delta-doped GaN has been grown by metalorganic chemical-vapor deposition. A very high peak density and narrow full width at half maximum (FWHM) of the carrier profile are obtained. It is found that the peak carrier density of Si delta doping increases with the doping time and SiH4 flow rate, while the FWHM of the carrier profile decreases with both increasing doping time and SiH4 flow rate. Some saturation in the carrier density has also been observed for relatively longer doping time. Except for a broadened carrier distribution in GaN induced by Si diffusion due to high growth temperature, the Si delta-doping properties in GaN are found to be similar to those of GaAs. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 22-24 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of thermo-optical coefficient (dn/dT) of GaN using spectroscopic ellipsometry is made, and a large thermo-optical nonlinearity near band edge, which increases with increasing temperature, has been observed. Kramers–Kronig transformation has been used to verify our results and a qualitative consistency has been obtained. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1573-2878
    Keywords: Large-scale linear programming ; interior-point methods ; Dantzig–Wolfe decomposition ; algorithmic complexity
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics
    Notes: Abstract This paper deals with an algorithm incorporating the interior-point method into the Dantzig–Wolfe decomposition technique for solving large-scale linear programming problems. The algorithm decomposes a linear program into a main problem and a subproblem. The subproblem is solved approximately. Hence, inexact Newton directions are used in solving the main problem. We show that the algorithm is globally linearly convergent and has polynomial-time complexity.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1573-2878
    Keywords: Interior-point methods ; monotone variational inequality problems ; rate of convergence
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics
    Notes: Abstract This paper offers an analysis on a standard long-step primal-dual interior-point method for nonlinear monotone variational inequality problems. The method has polynomial-time complexity and its q-order of convergence is two. The results are proved under mild assumptions. In particular, new conditions on the invariance of the rank and range space of certain matrices are employed, rather than restrictive assumptions like nondegeneracy.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1572-8986
    Keywords: Induction plasma ; modeling ; chemical equilibrium ; silicon nitride synthesis
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A mathematical model is presented for the numerical simulation of the flow, temperature, and concentration fields in an rf plasma chemical reactor. The simulation is performed assuming chemical equilibrium. The extent of validity of this assumption is discussed. The system considered is the reaction of SiCl4 and NH3 for the production of Si3N4.
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  • 6
    ISSN: 1572-8986
    Keywords: Induction plasma ; modeling ; chemical kinetics ; dissociation of silicon tetrachloride
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A kinetic model has been developed for the prediction of the concentration gelds in an rf plasma reactor. A sample calculation for a SiCl4/H2 system is then performed. The model considers the mixing processes along with the kinetics of seven reactions involving the decomposition of these reactants. The results obtained are compared to those assuming chemical equilibrium. The predictions indicate that an equilibrium assumption will result in lower predicted temperature fields in the reactor. Furthermore, for the chemical system considered here, while differences exist between the concentration fields obtained by the two models, the differences are not substantial.
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  • 7
    ISSN: 1572-8986
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract A free-burning, high-intensity argon arc at atmospheric pressure was modeled during the evaporation of copper vapor from the anode to study the impact of the vapor to the entire plasma region. A uniform and a Gaussian radial velocity distribution are adopted for the copper vapor at the anode boundary with a net mass flow rate known from the experiment. The effect of both velocity distributions on the temperature, mass flow, current flow, and Cu concentration was studied for the entire plasma region. The cathode region is not affected by the evaporated copper, and the Cu vapor concentration in the arc core is negligible.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2567-2569 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN films were grown on sapphire and SiC substrates. The crystal qualities of GaN films were investigated by photoluminescence, atomic force microscopy, and electron-beam-induced current measurements, etc. It was found that the crystal quality of GaN on SiC is better than the one on sapphire. Ni/Au Schottky contacts were formed on the both samples. The electronic characteristics were obtained by current–voltage and capacitance–voltage measurements. Schottky diodes on sapphire substrate show breakdown voltage of −80 V. While for SiC substrate, the strong breakdown was not observed even at −100 V. The reverse leakage current of diodes based on SiC is over three orders of magnitude lower than that of sapphire substrate when the reverse voltage is above 50 V, which is due to the presence of low dislocation density and high thermal conductivity. © 2001 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2424-2426 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The emission spectrum of a current injected InGaN/AlGaN surface emitting diode has been investigated. A clear redshift of the low energy edge with increasing injected current has been observed, and is attributed to the many body effects. The carrier density and band gap narrowing are obtained by fitting the line shape of the emission spectrum, using Landsberg model which includes many body effects. A redshift of around 92 meV of the low energy edge is obtained as injected current increases from 400 to 4000 mA. The band gap change can be described well in proportion to the 1/3 power of the carrier density, which is just suggested by the exchange energy of electron–electron, and hole–hole interactions. © 1997 American Institute of Physics.
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