Springer Online Journal Archives 1860-2000
Chemistry and Pharmacology
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Abstract Electroplating of II-VI semiconductors like ZnSe into porous silicon can be an efficient and low cost method to fill the porous volume with a transparent and conductive material. With n-type porous layers, ZnSe impregnation is more effective near the sample surface because of reaction rate limitations due to diffusion in the electrolyte. In this paper, it is shown that the deposition of ZnSe into p-type porous silicon can be localized in the lower part of the porous layer if the reduction reaction rate is monitored by limiting the charge carrier supply. This can be done by controlling the power of the laser beam which photo-generates the carriers at the bottom of the pores. Studying the porous layer chemical composition by Auger electron spectroscopy confirms that the deposit is localized at the pore bottom, whereas the changes in the chemical composition of the porous silicon surface are analyzed by infra-red spectroscopy.
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