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  • 2000-2004  (5)
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2063-2065 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Urbach bandtail characteristics in InN thin films grown by radio-frequency magnetron sputtering on sapphire (0001) substrates have been investigated both theoretically and experimentally. The bandtail parameter in InN thin films has been obtained by temperature-dependent transmission spectra, with the aid of a detailed calculation of the transmission profile. A bandtail model based on the calculation of density of occupied states and the carrier–phonon interaction has been employed to analyze the temperature-dependent bandtail characteristics. The bandtail parameter is in the range of 90–120 meV in the InN thin film. It is found that the carrier–phonon interaction in InN is weak and the structural disorder contribution (∼90 meV) dominates over the interactive terms. The high structural disorder in InN thin films may relate to the high nonradiative recombination centers. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 33 (2000), S. 801-803 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: An approach to using multilayer optics for SAXS is discussed. The approach consists of employing a two-dimensional multilayer focusing optic to monochromatize and intensify the x-ray beam, and a pinhole system to further shape the beam. Depending on the sample scattering power, different pinhole systems can be used. With a two-pinhole system, high flux can be achieved but with nonblocked parasitic scattering from the pinholes and scattering from multilayer reflectors. With a three-pinhole system, parasitic scattering and scattering from multilayer are completely shielded beyond certain angular range for weak scattering samples. Using ray-tracing method, the performances of the proposed systems are compared to the most commonly used graphite-pinhole system and found to provide a factor 10 more flux for similar resolution and background requirements.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Key properties of PbSrSe thin films grown by molecular beam epitaxy have been studied for mid-infrared optoelectronic device applications. Detailed knowledge of the material parameters for the device design is required. The material parameters considered are: temperature-dependent band gaps, composition (or band gap)-dependent effective masses, and energy-dependent refractive indices. The study has been carried out by a combination of temperature-dependent photoluminescence and absorption measurements with the theoretical models on PbSrSe thin films of Sr compositions of as high as 0.276. The derived empirical equations for band gaps, effective masses, and refractive indices have been employed successfully in PbSe/Pb0.934Sr0.066Se multiple quantum well mid-infrared laser systems, for studying the band offsets and subband behavior. We have shown that the derived material parameters clearly promise of being applied to other PbSrSe thin films and PbSe/PbSrSe heterostructure systems for their optoelectronic applications. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2579-2581 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic states in PbSe/Pb0.934Sr0.066Se multiple-quantum-well structures (MQWs) grown by molecular-beam epitaxy have been investigated both theoretically and experimentally for the midinfrared laser applications. With the aid of combined temperature-dependent photoluminescence and absorption measurements on a Pb0.934Sr0.066Se thin film for the effective masses and temperature-dependent band gaps, we find that the PbSe/PbSrSe MQWs have type-I band alignment and the conduction band offset ratio is Qc=0.82±0.03. The calculation, taking into account the strain, carrier confinements, and the multivalley band structure, can well explain both the observed luminescence peak energies and the temperature coefficient of the luminescence peaks as a function of well thickness. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5444-5446 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this communication, we have carried out a detailed investigation of radiative recombination in n-GaAs homojunction far-infrared detector structures with multilayer emitter (n+)-intrinsic (i) interfaces by temperature-dependent steady-state photoluminescence measurements. The observation of the emitter-layer luminescence structures has been identified from their luminescence characteristics, in combination with high density theoretical calculation. A photogenerated carrier transferring model has been proposed, which can well explain the dependencies of the luminescence intensities on the laser excitation intensity and temperature. Furthermore, the obtained radiative recombination behavior helps us to offer a proposal to improve the operating temperature of the detector. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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