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  • 1995-1999  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 232-234 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use a Monte Carlo model to investigate the improvement of avalanche noise performance in thin p+-i-n+ GaAs diodes. The model predicts a decrease in avalanche noise as the multiplication length decreases from 1.0 to 0.05 μm, in good agreement with recent experimental measurements. Our simulations suggest that electron initiated multiplication in short devices has inherently reduced noise despite higher feedback from hole ionization, as compared to long devices. This low noise behavior results from the narrower ionization probability distribution and larger dead space effect as a higher operating electric field needed in short devices. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3426-3428 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Avalanche multiplication and noise in 1.0, 0.5, 0.1, and 0.05 μm GaAs p+-i-n+ diodes have been calculated for both electron and hole initiated multiplication using a simple model which incorporates a randomly-generated ionization path length (RPL) and a hard-threshold dead space. We find that the mean multiplication obtained using this RPL model is in excellent agreement, even for the shortest structure, with that obtained from an analytical-band structure Monte Carlo (MC) model, which incorporates soft-threshold effects. However, it predicts slightly lower avalanche noise in the shorter devices. This difference results from the narrower ionization path length probability distribution and larger dead space of the hard-threshold RPL model at high electric fields as compared to the more realistic distribution function associated with the relatively sophisticated MC model. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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