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• 1985-1989  (3)
• 1980-1984  (1)
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Year
• 1
Electronic Resource
Springer
Applied physics 23 (1980), S. 15-19
ISSN: 1432-0630
Keywords: 64.75+g ; 61.70T ; 42.55
Source: Springer Online Journal Archives 1860-2000
Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
Notes: Abstract The solubility of several dopants (Sb, Ga, Bi, In) in laser treated silicon has been investigated. The dopants were introduced by vacuum deposition followed by ruby laser irradiation. Their solubility was determined by Rutherford backscattering spectroscopy measurements in channelling and random conditions. In all cases, a maximum solubilityC S * , much higher than the equilibrium solubility limitC S 0 and independent of the pulsed laser energy density, was found. The values obtained are in good agreement with those calculated from a simple model based on phase diagram considerations, using the relationship: $$C_S^* = \frac{{C_S^0 }}{{k_0 }}k^* ,$$ wherek 0 andk * are the equilibrium and effective distribution coefficients. Finally, the existence of a new solubility limit for a laser treatment is discussed.
Type of Medium: Electronic Resource
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• 2
Electronic Resource
Springer
Applied physics 38 (1985), S. 23-29
ISSN: 1432-0630
Keywords: 68.55 ; 81.10 ; 73.40 Cg
Source: Springer Online Journal Archives 1860-2000
Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
Notes: Abstract Titanium silcides have been formed on monocrystalline (111) silicon substrates by rapid thermal annealing (RTA) of Ti layers deposited on Si at 700–800 °C for 1 to 240 s. The phase composition is dependent on the annealing temperature and time: at 700° and 750 °C for short annealing, TiSi and TiSi2 are observed. At 800 °C and by increasing the exposure time at 700 ° and 750 °C, only TiSi2 is detected. The growth of the total silicide thickness is found to be faster for RTA than for conventional furnace annealing and governed by two different mechanisms depending on the phases formed: in the range 700–750 °C, and 750–800 °C, activation-energy values of 2.6 ± 0.2 and 1.5 ±0.2 eV are found, respectively. For a thin deposited Ti layer (〈 100 nm), the whole Ti is finally transformed into TiSi2 with 20@ μω cm resistivity. For thicker Ti thicknesses, titanium oxide stops the reaction.
Type of Medium: Electronic Resource
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• 3
Electronic Resource
Springer
Applied physics 44 (1987), S. 227-232
ISSN: 1432-0630
Keywords: 61.70Wp ; 68.60+q ; 81.40G
Source: Springer Online Journal Archives 1860-2000
Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
Notes: Abstract The reaction during rapid thermal annealing of the Ti-Si couple with arsenic implanted either into titanium or into silicon has been investigated from the point of view of suicide formation kinetics and impurity redistribution. In contrast with similar experiments on other refractory metals, tungsten for example, the reaction is not blocked by the presence of arsenic but a temperature and dose dependent impurity effect leading to a lowering of the growth rate of the disilicide phase is observed. This has been attributed to arsenic segregation in the grain boundaries of the growing suicide which reduces the transport of silicon via easy diffusion paths towards the unreacted metal or a metal rich suicide phase. Arsenic, when present in the metal, has been found to produce the same effects as oxygen at the early beginning of the annealing. However, after the reaction has started the respective behaviour and influence of arsenic and oxygen become completely different.
Type of Medium: Electronic Resource
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• 4
Electronic Resource
[S.l.] : American Institute of Physics (AIP)
Journal of Applied Physics 59 (1986), S. 3921-3923
ISSN: 1089-7550
Source: AIP Digital Archive
Topics: Physics
Notes: Rapid thermal heating of silicon samples in a dry O2 ambient has been used to form thin SiO2 films. Compared to conventional furnace oxidation, an increased growth rate was observed which is linearly dependent on the square root of time. Activation energies of 1.99 and 2.26 eV for 〈111〉 and 〈100〉 orientation, respectively, have been determined in the range 1000–1200 °C.
Type of Medium: Electronic Resource
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