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• 1980-1984  (4)
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• 1
Electronic Resource
Springer
Applied physics 25 (1981), S. 139-142
ISSN: 1432-0630
Keywords: 61.80 ; 78.30 ; 85.30
Source: Springer Online Journal Archives 1860-2000
Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
Notes: Abstract High power density electron beams offer new opportunities for studies of epitaxial growth of semiconductor materials. Assuming that the mechanism of epitaxial growth can be understood as a surface melting followed by supercooling regrowth, the heat flow equation has been applied to calculate the temperature reached after an electron beam pulse of power density between 0.5–2 J/cm2. Comparison with laser annealing is made.
Type of Medium: Electronic Resource
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• 2
Electronic Resource
Springer
Applied physics 23 (1980), S. 15-19
ISSN: 1432-0630
Keywords: 64.75+g ; 61.70T ; 42.55
Source: Springer Online Journal Archives 1860-2000
Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
Notes: Abstract The solubility of several dopants (Sb, Ga, Bi, In) in laser treated silicon has been investigated. The dopants were introduced by vacuum deposition followed by ruby laser irradiation. Their solubility was determined by Rutherford backscattering spectroscopy measurements in channelling and random conditions. In all cases, a maximum solubilityC S * , much higher than the equilibrium solubility limitC S 0 and independent of the pulsed laser energy density, was found. The values obtained are in good agreement with those calculated from a simple model based on phase diagram considerations, using the relationship: $$C_S^* = \frac{{C_S^0 }}{{k_0 }}k^* ,$$ wherek 0 andk * are the equilibrium and effective distribution coefficients. Finally, the existence of a new solubility limit for a laser treatment is discussed.
Type of Medium: Electronic Resource
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• 3
Electronic Resource
Springer
Applied physics 31 (1983), S. 147-152
ISSN: 1432-0630
Keywords: 61.80 ; 85.30 ; 71.20
Source: Springer Online Journal Archives 1860-2000
Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
Notes: Abstract Deep-level transient spectroscopy has been used to investigate the defects remaining in ion implantedp-n junctions in silicon after various pulsed annealing techniques, including ruby and YAG lasers as well as pulsed electron beams (PEBA). The nature and distribution of the various identified levels are discussed for each procedure as a function of various experimental parameters.
Type of Medium: Electronic Resource
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• 4
Electronic Resource
Springer
Applied physics 35 (1984), S. 161-167
ISSN: 1432-0630
Keywords: 34 ; 79.20
Source: Springer Online Journal Archives 1860-2000
Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
Notes: Abstract Krypton ions in the energy range 20–300 keV are used to generate recoiling atoms in silicon from thin layers evaporated on its surface. The recoil yields and the impurity distributions in the substrate have been measured as a function of several parameters (energy, thickness of the layer, incident dose). The results are used to propose a new formulation of the recoil yield based on the possibility, for both projectiles and recoiling atoms, to remove impurities previously introduced in silicon. The calculation fits very well the experimental results using displacement energies close to the generally admitted values
Type of Medium: Electronic Resource
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