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  • American Association for the Advancement of Science (AAAS)  (1)
  • 2010-2014  (1)
  • 1
    Publication Date: 2011-12-24
    Description: A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input power is higher than the forward input. The silicon optical diode is ultracompact and is compatible with current complementary metal-oxide semiconductor processing.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Fan, Li -- Wang, Jian -- Varghese, Leo T -- Shen, Hao -- Niu, Ben -- Xuan, Yi -- Weiner, Andrew M -- Qi, Minghao -- 1R01RR026273-01/RR/NCRR NIH HHS/ -- R01 GM103401/GM/NIGMS NIH HHS/ -- New York, N.Y. -- Science. 2012 Jan 27;335(6067):447-50. doi: 10.1126/science.1214383. Epub 2011 Dec 22.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="" target="_blank"〉PubMed〈/a〉
    Keywords: Equipment Design ; *Lasers, Semiconductor ; Optical Phenomena ; Semiconductors ; *Silicon
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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