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  • American Institute of Physics (AIP)  (1)
  • 1995-1999  (1)
  • 1905-1909
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    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6838-6842 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the role of thallium as a surfactant in the growth of InAs on GaAs(001) by molecular beam epitaxy. Thallium suppresses the transition from two-dimensional to three-dimensional growth modes for temperatures below 440 °C without incorporating significantly into the bulk InAs lattice. It extends the range of temperatures at which InAs may be grown, and appears to improve the crystalline quality of growth at 520 °C. Preliminary results indicate that at low temperature (280 °C) thallium does not prolong pseudomorphic growth beyond the normal critical layer thickness, but rather may form interfacial InTlAs with a greater concentration of thallium than has been achieved to date. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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