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  • American Institute of Physics (AIP)  (3)
  • 1995-1999  (3)
  • 1920-1924
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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conversion efficiency of spectral emission from laser-irradiated solid targets was investigated for short wavelength source development. The plasma brightness was quantified using absolutely calibrated detectors for 20 materials and spectra were obtained between 50 and 200 A(ring). Laser parameters such as wavelength, pulse length, intensity, and spot size were systematically varied to establish a comprehensive database for source optimization. Qualitative differences in the underlying dominant emission features as a function of atomic number and laser wavelength were observed that accounted for the relatively high spectral conversion efficiencies produced. In the specific case of Sn, a conversion efficiency greater than 0.8%/eV has been observed in the technologically important region of λ=134.0 A(ring) using a laser intensity of 1–2×1011 W/cm2.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3028-3034 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The time-dependent dielectric breakdown (TDDB) characteristics of thin oxide–nitride–oxide (ONO) films containing 4 nm of Si3N4 were found to be exclusively determined by statistical thickness fluctuations of the Si3N4 layer. A two-parameter statistical model describes this roughness and explains experimental TDDB data. A simple growth model combined with the statistical model reduces the number of parameters to one. It is consistent with TDDB data and is in quantitative agreement with transmission electron microscopy and x-ray photoelectron spectroscopy data and is able to explain the origin of the roughness. On an ONO with a 4 nm Si3N4 layer and an area of 8 cm2—corresponding to the total storage area of a 256 Mbit dynamic random access memory—the thinnest point in the Si3N4 can be expected to be below 10 A(ring). So eliminating the Si3N4 roughness would bring a drastic improvement in reliability. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of five short-period (InAs)6/(AlSb)6 superlattices, grown either with AlAs-like, InSb-like, or alternating interfaces, were studied by means of x-ray diffraction, high resolution transmission electron microscopy (HRTEM), Raman spectroscopy, photoluminescence and ellipsometry. The combination of these techniques allows us to explain the pronounced differences in the optical and structural properties of both types of interfaces. In samples with an AlAs-like bottom interface x-ray, HRTEM and Raman results demonstrate the differing structural quality to be related to inhomogeneous strain relaxation and As intermixing. The energies of the critical points E0, E1 and E1+Δ1 of the samples with pure AlAs-like interfaces are shifted by more than 100 meV to higher energies with respect to those of the samples with InSb-like interfaces. These differences can be understood on the basis of the different interfacial atomic structure and strain in the samples. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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