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  • Articles  (3)
  • American Institute of Physics (AIP)  (3)
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3972-3974 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carrier localization in a disordered potential was studied in type-I strained Si1−xGex/Si superlattices (SLs) where layer widths have been artificially pseudorandomized. The photoluminescence (PL) intensity under a transverse bias voltage varies monotonically and exhibits a folded increase as the bias is increased as opposed to an ordered SL where only steady drop-off of PL intensity, symmetric with respect to bias polarity, was observed with increasing field strength. The results indicate that electron and hole wave functions are located spatially apart at zero bias due to disorder-induced localization. We point out that such a wave-function displacement is even pronounced for type-II SL potentials in the presence of monolayer thickness fluctuation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new type of low-energy ion accelerator has been developed. It includes an eight-storied Disktron generator, newly developed accelerating tubes which hold up to 4 MV/m, both single and tandem acceleration capability, and a compound negative ion source. The Disktron generates 3.2 MV with a dummy load and 2.2 MV with ion beams, and has a voltage stability better than 10−3 at around 1 MV with a corona feedback stabilizer or a generating voltmeter feedback stabilizer only. The highly stabilized voltage of the Disktron has particularly been allowed to form an ion microbeam of about 1-μm diameter.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2097-2099 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excitonic photoluminescence in a transverse electric field has been studied in strained Si1−xGex/Si type-I quantum wells (QWs) in the weak field regime. With increasing electric field, a steady blue-shift of the free exciton emission energies has been observed, thereby suppressing the anticipated downward shift due to a quantum confined Stark effect. It is revealed that a field-driven decrease of the exciton binding energies gives a good account of the experimental blue-shift for a wide range of well widths, which is also in good agreement with variational calculations. We also find that the extremely small conduction band offset characteristic of stained Si1−xGex/Si type-I QWs is responsible for the absence of the Stark red-shift and the mixed dimensionality. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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