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  • 1
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lateral uniformity of n+-p junctions formed by indiffusion of As or P from an amorphous or polycrystalline silicon thin-film source into the underlying silicon substrate has been investigated using a concentration-dependent etch and transmission electron microscopy. Grain boundaries act as fast diffusant pipelines and also possibly inject point defects into the substrate, thereby enhancing bulk diffusivities locally in the substrate. Delineated ultrashallow junctions show significant doping lateral inhomogeneities in the substrate for as-deposited amorphous silicon diffusion sources but not for as-deposited polycrystalline silicon diffusion sources because of a larger final grain microstructure after annealing in the former case. However, the doping inhomogeneities are gradually smeared out as impurities diffuse deeper into the substrate.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4863-4865 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Flux spreading in thin-film recording heads has been studied using a three-dimensional transmission line model. This model uses the observed domain wall structure in a thin-film head as the map on to which a set of electrical circuit nodes in the model are placed. These nodes are connected in the transverse direction by inductive circuit elements which simulate the domain wall mobility for transverse flux conduction by wall motion. In the longitudinal direction skin-effect-limited conduction by magnetization rotation is simulated by a R/L series element. At frequencies above 8 MHz this model begins to exhibits a concentration of flux on the axis of the head.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic properties of epitaxial iron films have been studied. The iron films were grown on {100} GaAs and GaInAs substrates. Both the magnitude of the anisotropy energies and direction of the easy axes were studied using a SQUID magnetometer. In particular, measurements were made of the magnetization in the plane of the film along the 〈100〉 and 〈110〉 directions. From these measurements the magnitude of the anisotropy energy and the direction of the easy axis were determined. Also measurements of the coercivity of the films were made using a magneto-optic Kerr effect system. These results are compared with those determined previously for iron films grown on GaAs.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3672-3672 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is now clear that both the atomic and magnetic properties of epitaxial Fe films can be controlled by the precise nature of the substrate which acts as the template for the growth. We have investigated the role of defects and strain arising from lattice mismatch on the growth and the magnetic properties of the Fe films. The films were grown by molecular-beam epitaxy (MBE) on three different well characterized surfaces: GaAs(100), In0.2Ga0.8As(100), and Fe(100). The first two surfaces were also prepared by MBE. This mole fraction of In was chosen to match the lattice constant of bulk α-Fe. The growth of the Fe film was characterized by using reflection high-energy electron diffraction (RHEED) and the results indicate that the morphology of the Fe films is smoother on the InGaAs surface than on the GaAs surface. Yet is is still much rougher than the growth on Fe(100) substrate. The magnetic properties were measured by using a SQUID magnetometer and coercivity values are comparable to that of the films grown on ZnSe.1
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5411-5417 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We first reduce existing equations for nonlinear thermoelectroelasticity to the case of large electric fields, small strains, and infinitesimal temperature variations. These equations are then specialized to the case of thin plates with completely electroded major surfaces, and it is shown that in this case the charge equation of electrostatics is satisfied trivially to the lowest order. An example is given to illustrate the effect of heat conduction on the response of a thin electroded plate subjected to time harmonic voltages on the two major surfaces.
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron diffusion in polycrystalline Si-on-single crystal Si systems has been studied by secondary ion mass spectrometry. The extrapolated B-diffusion profiles in polycrystalline Si and in the single crystal Si substrate reveal a discontinuity at the polycrystalline Si-single crystal Si interface. The discontinuity in the B profiles is believed to occur due to the blockage of B-defect complexes by the interfacial oxide between polycrystalline Si and the single-crystal Si substrate, as well as the immobility of these defect complexes in single crystal Si. The B in the implant peak region above the B solid solubility limit is found to be immobile in single crystal Si during annealing due to the formation of electrically inactive B-defect complexes. In polycrystalline Si, however, our results show that the B in the peak region spreads out more rapidly than in single crystal Si possibly due to the diffusion of B-defect complexes along grain boundaries. The B-defect complexes are electrically inactive as determined by spreading resistance analysis. If the B concentration is lowered below the solid solubility limit, either by decreasing the dose or by raising the anneal temperature, no discontinuity is observed in the B profile across the polycrystalline Si-single crystal Si interface.
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  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new concept for improving the cross-talk performance of flux sense heads is proposed and is experimentally verified. The concept makes use of a new longitudinal media and a shielded flux sense Hall head. The new longitudinal media uses a soft magnetic layer separated by a nonmagnetic layer underneath the hard magnetic layer. The Hall head consists of a three pole structure. The outer two magnetic poles are the write poles which also act as a shield for the center pole during read. For a carefully selected thickness of the soft magnetic layer and the nonmagnetic layer, a significant reduction in fringing at low frequencies is observed. Using a 3.9-μm-wide Hall head on new longitudinal media, the fringe width at 0.5F[4F of 30 K flux reversal per in. (KFRI)] is reduced by 51% compared to the fringe width on a conventional media. This concept entails a loss of on-track amplitude. The loss of amplitude is significantly less at high frequencies compared to low frequencies, thereby improving the head resolution.
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  • 8
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper discusses the diffusion of As, P, and B in amorphous and polycrystalline silicon-on-single-crystal silicon systems during rapid thermal annealing and furnace annealing. It is found that the changes of microstructure during annealing play a major role in determining the diffusion profiles in the substrate as well as in the polycrystalline silicon layer. For As or P doping, a drive-in diffusion results in a much larger grain microstructure for as-deposited amorphous silicon than for as-deposited polycrystalline silicon, which leads to the formation of shallower junctions in the substrate for the first case. For B doping, there is little difference in the final microstructure and junction depth between the two cases. At high anneal temperatures, the native interfacial oxide breaks up, causing epitaxial realignment of the polycrystalline silicon film and subsequent enhanced diffusion in the substrate.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystals of mixed methyl-(2,4-dinitrophenyl)-aminopropanoate (MAP): 2-methyl-4-nitroaniline (MNA) have been grown from solution using a 40:60 mixture of ethanol and ethyl acetate. Formation of an equimolar complex is confirmed by x-ray diffraction studies. The complex crystallizes in the monoclinic space group P21. The lattice parameters are a=6.9196(±0.005) A(ring); b=7.673(±0.008) A(ring); c=18.554(±0.001) A(ring); and β=92.547(±0.006)0. b axis is the unique twofold axis and there are two molecules per unit cell. The molecules stack along the b axis with MAP atop MNA atop MAP. Details of the molecular orientation are given. The Raman spectra also indicate that the parent molecules are not disturbed in the process of crystallization. The second harmonic generation efficiency of the new material for 1064 nm laser radiation is observed to be the same as that of MAP but lower than that of MNA. The latter is attributed to the absorption at 532 nm in the mixed crystal. The melting point determined by differential scanning calorimetry is 104.30 °C.
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  • 10
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Starting with the Anderson periodic Hamiltonian for a system of the narrow- and wide-band electrons, an explicit expression for the superexchange coupling between spins of localized electrons is derived and analyzed. The superexchange coupling is based on the fourth-order p-d hybridization. One special aspect of the problem is systematically discussed at T=0 K. It is shown that the presence of compensating holes produced in Ca2+:YIG by the valence-uncompensated doping, can result in a decrease in the strength of the superexchange coupling and, depending on the concentration of the doping Ca2+ ions, a change of the sign of the coupling constant is obtained. Numerical results are calculated both for the charge-transfer and Mott–Hubbard models for insulators
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