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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown within a simple micromagnetic model calculation that novel magnetic hysteresis behavior including the unusual phenomenon of negative remanence can occur in asymmetric exchange coupled bi- and multilayer films. The latter denotes a magnetization state opposite to the field direction in which the sample was premagnetized. We have observed such effects in polar Kerr hysteresis measurements from perpendicularly oriented sandwich structures grown on Pt(111) buffers, e.g., Co(0.8 nm)/Rh(0.9 nm)/Co(0.8 nm). The model minimizes the total magnetic energy as function of the applied field and angles phi1 and phi2 of the two layers with respect to the film normal (easy) direction. The energy includes besides external field energy, a demagnetization term and interlayer exchange and anisotropy contributions. The general shape of the experimentally observed hysteresis loops can be reproduced, if one assumes slight asymmetries in the magnetic properties of the ferromagnetic layers. These could be caused by unequal thicknesses and/or local roughnesses which would alter the interfacial anisotropy contributions. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have prepared n-channel silicon field-effect transistors, which are capable of working at liquid helium temperatures (4.2 K) and used them in cooled preamplifiers for rf superconducting quantum interference device (SQUID) readout electronics. All metallizations of these transistors were made of niobium, to study the possibility of a further integration of a SQUID and FET on the same chip. Using the FETs in a cooled preamplifier together with a rf SQUID gradiometer, the flux noise of the system could be reduced by a factor of 3 compared to a room temperature low noise preamplifier. We have also performed calculations of a possible increase of the substrate temperature due to the power dissipation of the FET and have measured the cross talk between FET and SQUID. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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