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  • 1
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline silicon (poly) gate metal-oxide-semiconductor (MOS) transistors were electrically stressed by constant-current tunneling. After the stress the devices were thermally annealed for variable times in the temperature range between 800 and 950 °C, and a second tunneling stress was performed. Capacitance-voltage (C-V) curve broadening and a charge pumping (CP) technique were used to detect interface state generation. It was found that the stress generated interface states are totally annealed by the thermal treatment. On the other hand, generation rates and saturation values, due to the second stress after annealing, exceed those of the fresh devices. Analysis of the generation process indicates that two types of interface states are generated: one, similar in its generation rate and saturation value to that of a fresh device, and another one, which is characterized by a higher generation rate and saturation value, is attributed to a new type of latent site. The density of this new type of latent interface states site decays exponentially with the annealing time. The annealing rate follows a temperature-dependent Arrhenius function. The anneal of this new type of interface state is characterized by an activation energy of 3.47 eV.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ohmic contacts produced by high-energy pulsed laser beam alloying Au/Te/Au/n-GaAs are investigated by micro Raman spectroscopy. The results are compared to those from furnace annealed ohmic contacts. For the furnace as well as for the laser annealed ohmic contacts, no evidence for a doping of the contact region is found in the Raman spectra. The presence of a highly disordered GaAs surface layer is observed for both types of contacts. In addition, after furnace processing a Ga2Te3 layer is formed. These results are consistent with earlier Mössbauer studies. For the laser alloyed samples the results strengthen the role of a defective/disordered interface structure where conduction might occur by a resonant tunneling process involving localized gap states.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4821-4826 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-oxide-semiconductor devices with variable aluminum gate thickness were electrically stressed by constant-current Fowler–Nordheim tunneling, until intrinsic oxide breakdown was achieved. I-V and C-V measurements were used to detect oxide-bulk trapping and interface-state generation rates during the stressing process. It was found that these rates were affected by the Al thickness only in the initial stages of the stressing, and that these rates are not a simple monotonic function of the Al gate thickness, but reach their maximum value between 500 and 1000 A(ring) of Al thickness.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 598-600 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline silicon gate metal-oxide-semiconductor transistors, fabricated with polycrystalline silicon leads, were repeatedly electrically stressed by constant-current Fowler–Nordheim tunneling cycles. After every stress cycle the devices were annealed for various time intervals at 950 °C. Capacitance-voltage measurements were used to detect stress-related interface-state generation rates and saturation values. It was found that although the stress-generated interface states are totally annealed by the thermal treatment, their generation rates and saturation values after anneal are a strong function of the anneal time, significantly exceeding the values of the fresh devices and inversely dependent on the anneal time. From the results it is concluded that a new type of latent interface-state sites is generated by the combination of tunneling stress and high-temperature annealing.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2990-2993 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The two possible causes of depth inhomogeneities of the microstructure of porous silicon are changes in the HF concentration with depth and a varying chemical etching rate of the porous silicon layer. During anodization chemical etching will become important for microporous silicon — e.g. p-porous silicon — due to the large internal surface area, especially at long etching times. On the other hand, a considerable decrease of the HF concentration will occur during etching with high current densities to produce p+-porous silicon with high porosities. We have investigated the depth inhomogeneity of porous silicon layers by spectroscopic ellipsometry, Raman spectroscopy and photoluminescence measurements. From a line shape analysis of the Raman signal a size distribution of nanocrystals is deduced. For p-porous silicon smaller nanocrystals are found near the surface of the layer; for p+-porous silicon etched with high current densities smaller nanocrystals are found near the porous silicon/substrate interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3816-3818 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Hall effect is a useful probe of the magnetization in thin metallic films since the signal is inversely proportional to the film thickness. Previously, the minimum in the coercivity, derived from the Hall hysteresis loop as a function of the angle of the applied field, has been used to determine the hard axis of magnetic thin films. A vibrating sample magnetometer can be used in this fashion if coherent rotation is the magnetization reversal mechanism. However, we show that even in the case of the Stoner–Wohlfarth model, the minimum of the Hall coercivity does not coincide with the hard axis. We propose an alternative method for determining the easy axis, which is independent of the magnetization reversal mechanism and does not require measuring the entire hysteresis loop. In addition, since for an arbitrary orientation of the applied field the measured Hall voltage will contain components due to magnetoresistance as well as the Hall effect, it is possible to extract a measure of the in-plane and perpendicular magnetization. Using this information, we derive a method of producing vector plots that show the magnitude and direction of the magnetization as a function of applied field for various applied-field orientations. Examples using CoCr and TbFe will be presented.
    Type of Medium: Electronic Resource
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