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  • American Institute of Physics (AIP)  (5)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 1448-1456 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Described here is the design and construction of a pulse-power generator capable of discharging at high repetition rates. It consists of eight triaxial Blumleins stacked in series at one end. These lines are charged in parallel and synchronously commuted with a single thyratron at the other end to produce an open circuit voltage across a stack of six times the charging voltage. An x-ray diode has been constructed and matched to this pulse-power source making possible the emission of an average bremsstrahlung exposure rate of 17 R/S from a sequence of 40-ns pulses. When operated at 60-kV charging voltage, direct spectral measurements show the output to be a true continuum, peaking at intensities in excess of 5×108 photons/keV/shot and containing useful intensities of photons having energies of 300 keV.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2062-2064 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work we report the first observation of the screening effect in large-area, cold-cathode diodes. A framing camera was used to observe the formation of emission centers (ECs) on a 200 cm2 velvet emitter. The density of ECs increased as a function of applied magnetic field as predicted. The current per EC decreased as the magnetic field was increased. These phenomena suggest methods of increasing the spatial and temporal uniformity of high-power electron beams.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 6273-6280 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article presents results on the surface etching of a Novolak-type polymer (Shipley, SPR2) on Si wafers using dielectric barrier discharges in oxygen at high pressures and room temperature. The etching depth is measured by mechanical profilometry as a function of gap spacing and gas pressure. Figures of merit are generated allowing comparison with conventional plasma surface treatment, as etch rate per power density coupled onto the sample surface (nm J−1 cm2), or coupled into the gas volume (nm J−1 cm3). Energy-density specific etch rates were measured as a function of the gap spacing (d) and the total oxygen gas pressure (p), as well as a function of the product of pd in the gas pressure range of 50–1500 mbar and of the gap spacing range of 1–20 mm. At a constant gap spacing and pressure, the removal rate is a linear function of the applied power density. The highest achieved etching rate per surface energy density is 2.2 nm J−1 cm2 at 730 mbar and 1 mm (0.2 nm J−1 cm3) and the highest etching rate per volumetric energy density is 0.85 nm J−1 cm3 at 290 mbar and 7 mm (0.87 nm J−1 cm2). The surface of the etched photoresist is characterized using mechanical profilometry and scanning electron microscopy. The results obtained in this work suggest that dielectric barrier discharges can be an efficient, alternative plasma source for general surface processing, because they can provide nonthermal discharges also near atmospheric pressures and thereby eliminate the need of costly vacuum systems. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 2260-2264 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Eight triaxial Blumleins have been stacked in series at one end while being synchronously commuted at the other end with a single hydrogen thyratron. Significant voltage gain has been maintained in the stack for periods of the order of 20 ns. Having no other switching elements, operation has been possible at repetition rates to 100 Hz. An x-ray diode has been matched to this pulse power source, making possible the emission of an average bremsstrahlung dose of 5.8 R/s from a sequence of 20-ns pulses. In less than 4 min of operation at 100 Hz, a dose of 1 kR could have been delivered to a target sample. When operated at 50-kV charging voltage, spectral measurements show the output to be a true continuum, peaking at intensities in excess of 2×108 keV/keV/shot and containing useful intensities of photons having energies of 150 keV.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma destruction of toxins, and volatile organic compounds in particular, from gas streams is receiving increased attention as an energy efficient means to remediate those compounds. In this regard, remediation of trichloroethylene (TCE) in silent discharge plasmas has been experimentally and theoretically investigated. We found that TCE can be removed from Ar/O2 gas streams at atmospheric pressure with an energy efficiency of 15–20 ppm/(mJ/cm3), or 2–3 kW h kg−1. The majority of the Cl from TCE is converted to HCl, Cl2, and COCl2, which can be removed from the gas stream by a water bubbler. The destruction efficiency of TCE is smaller in humid mixtures compared to dry mixtures due to interception of reactive intermediates by OH radicals.
    Type of Medium: Electronic Resource
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