AIP Digital Archive
Interband transitions in GaAs1−xNx (0≤x≤0.033), involving a localized resonant N-derived energy level and the GaAs-like L conduction and valence band states, have been studied by resonant Raman scattering and spectroscopic ellipsometry, respectively. Raman scattering by the GaN-like LO2 phonon showed for x(approximate)0.01 a pronounced resonant enhancement for incident photon energies approaching the mostly N-related E+ transition at around 1.8 eV, but not at the E1 and E1+Δ1 interband transitions, reflecting the strongly localized nature of both the N-related electronic level and the Ga–N vibrational mode. Spectroscopic ellipsometry, in contrast, being sensitive to the overall dielectric function of the GaAsN, revealed the effect of N incorporation on the GaAs-like E1 and E1+Δ1 interband transitions, which is a high-energy shift with increasing N-content accompanied by a significant broadening. © 2000 American Institute of Physics.
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