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  • American Institute of Physics (AIP)  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 88-90 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using electroabsorption measurements, we have studied the effects of atomic superlattice ordering on the electronic band structure of InGaAs for different growth parameters. We have observed ordering-induced polarization anisotropy, valence-band splitting and band gap reduction strongest for 550 °C growth and 2°[111]B tilted substrates. Back-folded conduction-band states show an ordering dependent energy shift. The position of the split-off valence-band, however, is almost unaffected. An extension to extremely low growth temperatures exhibits ordering also for 450 °C growth. Atomic force microscopy measurements reveal a temperature-dependent change of InGaAs surface from step-like to island formation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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