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  • 1
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated 3 μm gate length self-aligned, depletion mode GaAs metal insulator semiconductor field effect transistors exhibiting transconductances, typically in the vicinity of 160 mS/mm. This achievement is attributed to the use of Si3N4 as the gate dielectric with a few monolayers of a Si/Ge interface layer between the GaAs channel layer and the insulator. The Si3N4/Si/Ge insulator structure is grown in situ using a plasma-enhanced chemical vapor deposition system which is connected by an ultrahigh vacuum transfer tube to an adjacent III-V molecular beam epitaxy system. Nearly ideal capacitance-voltage curves (compared to previous publications) suggest the existence of a high quality insulator/semiconductor interface. The lowest interface trap density that has been measured, as determined from the magnitude of the conductance peak is ∼2×1011 eV−1 cm−2.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the electrical characteristics of in situ deposited Si3N4/Si/In0.53Ga0.47As depletion-mode metal-insulator-semiconductor field-effect transistors (MISFETs). MISFETs with 2.2-μm gate lengths fabricated by a self-aligned gate process exhibited extrinsic transconductances of over 200 mS/mm. The drain current drifted by only 1% during the first 10 h of operation. This small shift is attributed to the reduction of traps at the interface by a pseudomorphic Si layer, incorporated at the interface between the dielectric and the In0.53Ga0.47As channel.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1826-1828 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report on gate quality Si3N4/Si/n-In0.53Ga0.47As capacitors representing significant improvement over that which has been previously obtained. These capacitors are formed by in situ nitride and Si layer deposition on as-grown molecular-beam epitaxy structure and are characterized by a small frequency dispersion, small hysteresis, a flat band voltage close to zero, and a minimum interface trap density of 2.4×1011 eV−1 cm−2.
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  • 4
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the interface properties of rapid thermal annealed in situ deposited gate quality Si3N4/Si/n-GaAs metal-insulator-semiconductor (MIS) capacitors. Conductance measurements show a minimum interface trap density of 1011 eV−1 cm−2 located in the lower-half of the GaAs band gap. The quasi-static capacitance-voltage (QSCV) curve shows the largest dip toward the high-frequency C-V curve ever observed in compound semiconductor-based MIS structures. In spite of the lowest interface trap density for GaAs-based MIS structures ever reported, conductance data reveal a rapid increase in the density of interface traps in the upper-half of the band gap. Both the ac loss and the capacitive frequency dispersion of the interface traps agree with the single time constant model. The anomalous frequency dispersion of the measured capacitance can be satisfactory explained by the trap location in the band gap and rapid increase in the trap density in the upper-half of the band gap.
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantum, wires, ranging in width from 900 to 42 nm, were patterned onto a 10-nm-thick In0.2Ga0.8As quantum well in GaAs cladding then regrown by migration-enhanced epitaxy. Atomic-resolution transmission electron microscopy images of two of the quantum wires, one 400 nm wide and the other 42 nm wide, show lattice deformation of the quantum wires due to compression by the cladding. The lattice constant in the growth direction varies with horizontal position inside each wire, from largest in the wire center to smallest at the sidewalls. In the 400 nm wire, the lattice constant in the growth direction fully reaches the pseudomorphically strained value of 5.83 A(ring) at a distance of 165 A(ring) from the sidewall, while the lattice constant in the 42 nm wire reaches only 5.79 A(ring), at 75 A(ring) from the sidewall. From the value of the compressed lattice constant in the center of the 42 nm wire, the amount of strain in the center of the wire is inferred and, from this strain, the expected strain-induced band-gap energy shift is calculated. Photoluminescence measurements are made on the wires, showing a strain-induced increase in peak emission energy with decreasing wire size. That this energy shift is strain induced is verified by comparing it to the far smaller energy shift of an unregrown but, otherwise, identical sample, which has no regrowth-induced compressive strain. For the 42 nm quantum wire, after the calculated contribution due to increased quantum confinement is accounted for, the energy shift measured by photoluminescence is consistent with the calculated value to within the experimental error. © 1995 American Institute of Physics.
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effects due to the capture of tunneling electrons by interface traps to the measured capacitance, Cm, and equivalent series resistance, Rm, of insulator-semiconductor interfaces in metal-insulator-semiconductor (MIS) capacitors in accumulation. A new circuit model taking into account the capture of tunneling electrons by interface traps is derived. Theoretical and experimental results of Si3N4/Si/GaAs, Si3N4/epi-Si, and SiO2/epi-Si MIS capacitors are compared. The Si, Si3N4, and SiO2 layers investigated were deposited in situ by electron cyclotron resonance generated plasma in an ultrahigh vacuum chemical vapor deposition chamber. Frequency dispersion of both Cm and Rm can be adequately explained by the new circuit model.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1210-1212 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Minority-carrier response and conductance loss characteristics of SiNx/Si/Ge/n-GaAs(001) metal–insulator–semiconductor (MIS) structures are presented. The response time of minority carriers with Si(≤10 Å)/Ge (20 Å) interlayers, as determined by the capacitance–voltage (C–V) method, is several orders of magnitude smaller than those with Si interlayers only. The minority carriers in n-type Si/Ge/GaAs layers respond to even a small ac signal of 1 kHz at room temperature, which is ascribed to the smaller band gap and thus a higher intrinsic carrier concentration of Ge. The minority carriers in the SiNx/Si/Ge/n-GaAs MIS structures respond to a 1 MHz signal at a sample temperature of 230 °C. Temperature-dependent C–V measurements on the GaAs MIS structure with Si/Ge, interlayers revealed the activation energy (Ea) of the minority-carrier recombination to be about 0.58 eV. The conductance loss characteristics of SiNx/Si/Ge/GaAs structures indicate a contribution by interface traps responding to slow states, while the fast states are a result of interface defects of the SiNx/Si/GaAs MIS system. © 1997 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2094-2096 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality Si (strained)/Si0.7Ge0.3 (relaxed) modulation-doped structures incorporating unusually thin (700 nm) buffer layers were grown with molecular beam epitaxy at 700 °C. By utilizing (100) substrates misoriented toward (011) by 4°, the density of threading dislocations was reduced by over an order of magnitude as compared with conventional techniques. These layers produced exceptionally high Hall mobilities of 1790 cm2/V s at 300 K and 19 000 cm2/V s at 77 K on n-type modulation-doped heterostructures. The effect of substrate misorientation on threading dislocation density was investigated using transmission electron microscopy and Nomarski microscopy.
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  • 9
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gain and spectral response of heterojunction phototransistors (HPTs) having a thin (0.1 μm) InGaAs strained absorbing layer in the collector has been investigated. Low dark current ∼ 5 pA (1×10−8 A/cm2) and large optical gain as high as 500 were observed. A resonant cavity composed of an AlAs/GaAs buried mirror structure (reflectivity R=0.9) and the epilayer surface (R=0.3) was used to enhance the otherwise small quantum efficiency η (at InGaAs absorption wavelength). For a 1000 A(ring) absorbing layer an improvement of η from 6.7 to 43% (6.4-fold) was demonstrated, in agreement with calculations, through the spectral analysis of the HPTs with and without resonant cavities.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 951-953 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed two-beam coupling gain (0.273 cm−1) that exceeds absorption (0.145 cm−1) in InP:Fe without applying an external field at λ=1.32 μm. Measurements of the gain coefficient as a function of grating spacing fit the photorefractive theory for simultaneous electron-hole transport, with the effective density of traps NE = (3.86 ± 1.1)NE=(3.86±1.1)× 1015 cm−3 and ξ, the factor that accounts for competition between electrons and holes, equaling −0.729±0.026. Absorption measurements, combined with the photoionization cross sections of electrons and holes, confirm these results. The agreement between theory and experiment suggests how to choose impurity concentrations that optimize net gain.
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