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  • American Institute of Physics (AIP)  (2)
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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the epitaxial growth and structural properties of Pb(ZrxTi1−x)O3 (PZT) thin films and of epitaxial heterostructures containing metallic DyBa2Cu3O7 (DyBCO) and ferroelectric PZT layers grown using an off-axis rf reactive sputtering technique. On (100) and (110) SrTiO3 substrates, tetragonal (001) and (011) epitaxial Pb(Zr0.52Ti0.48)O3 films have been obtained. Extensive characterization on (001) PZT films using x-ray diffraction, scanning electron microscopy, transmission electron microscopy (TEM), Rutherford backscattering spectroscopy, and atomic force microscopy reveal a very high degree of structural quality, and very smooth surfaces with a root-mean-square roughness of 3 A(ring) for a 0.5 μm×0.5 μm scan on a 1000 A(ring) thick film. TEM studies on DyBCO–PZT structures reveal sharp and clean interfaces without traces of intermixing. Primary dislocations are observed at the DyBCO–PZT interface, which do not propagate through the PZT layer. [101]-type dislocations are also seen, possibly related to subgrains in the PZT layer, and they show an extended strain field throughout the PZT layer. The possible relation between these structural defects and the nonlinear current–voltage characteristics observed in DyBCO–PZT–Au structures is discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1820-1825 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The TiSi2/Si system is investigated using high-resolution transmission electron microscopy (HRTEM) and electron diffraction in both cross-section and flat-on modes. The results show that the large crystallographic differences between both crystals and the complexity of the reaction path are not obstacles to the formation of flat and well-defined interfaces. (1¯01) TiSi2 proves to be a preferential plane for epitaxial growth on Si (111). In this case, the terminal TiSi2 plane at the interface is composed of single atomic species. It is proposed that the reasons leading to such an epitaxy are related to the small discrepancy of atomic densities and interplanar spacings characteristic of these planes. Observation of local epitaxial relationships are reported and investigated using a lattice matching model. It turns out that they minimize the two-dimensional misfit at the interface.
    Type of Medium: Electronic Resource
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