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  • American Institute of Physics (AIP)  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3300-3307 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article noise measurements on amorphous silicon nip and pin diodes are presented and discussed with regard to standard models for flicker noise. It is shown that 1/f noise is present in the dark forward current of a-Si:H diodes as well as in the photocurrent at low forward or reverse bias. The dependence of the noise power spectral density on dark current and photocurrent density, diode area, thickness, and current aging leads us to the conclusion that fluctuations in the electron injection current at the n+ contact are the reason for 1/f noise. This model is further supported by the current and frequency dependence of the shot noise in the photocurrent. We assume that the trapping of carriers switches on and off current filaments in the diode interface layer. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4466-4473 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Image sensors made from amorphous silicon ( a-Si:H ) are under development. Their elements consist of back-to-back Schottky diodes. For practical operation, long-term stability is of great importance. We investigated dark conductivity and photoconductivity, capacitance-voltage characteristics, and response behavior after switching off illumination. Even after light soaking for many hours, no change in photocurrent occurred, whereas dark current, capacitance, and response time increased. These changes are metastable and can be reversed by annealing above 200 °C. Contrary to the Staebler–Wronski effect, [Appl. Phys. Lett. 31, 292 (1977)], the dark-current increase disappears at room temperature after several hours. We investigated the time dependence of this relaxation and calculated the energetic depth of the states involved. The contact between a-Si:H and indium-tin-oxide is described as a Schottky–Bardeen-metal-insulator-semiconductor junction. Its properties are strongly dependent on interface states, in particular on the position of the neutrality energy of the interface states with respect to the Fermi energy. We show that besides the well-known Staebler–Wronski effect, a new degradation process is observed. We suggest a model where holes are trapped in interface states about 1.0–1.4 eV above the valence band. Their thermal emission governs the relaxation behavior of the dark current.
    Type of Medium: Electronic Resource
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