AIP Digital Archive
Electrical Engineering, Measurement and Control Technology
In this article we describe an advanced inductively coupled plasma ion source being developed at Veeco for applications in data storage and active optical device fabrication. The new source design minimizes rf capacitive coupling. Capacitive coupling is responsible for erosion of the quartz discharge chamber and high transverse ion energies. Suppression of capacitive coupling, however, can be problematic for some applications due to the fact that, without it, conductive coatings that shield the transfer of inductive power to the plasma can accumulate inside the source. The authors have developed a simple and unique protective device that when installed on the quartz hardware effectively inhibits rf losses in the deposited films, greatly extending the quartz maintenance cycle and overcoming the above problem. Reduction of capacitive coupling is achieved using a slotted Faraday shield inserted between the low-frequency 1.8 MHz rf antenna and the plasma. It is found that the rf power loss to this shield is extremely low, yet it is very effective, essentially eliminating signs of discharge chamber sputtering. Further advantages of these new design features and application to special controlled etching processes are described. Also, new performance and reliability data for Veeco's recently developed "flangeless" self-aligned ion optics grid assembly, implemented on the RIM-210 focused beam deposition ion source is shown, demonstrating the advantages of this design. © 2002 American Institute of Physics.
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