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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 279-281 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An intracavity lens has been integrated into a high-power tapered ridge-waveguide semiconductor laser diode. The lens is designed to compensate for the phase curvature of the incident mode on the output facet. This has led to improved linearity in the light–current characteristics of the device, showing an increase of up to 47% in power slope efficiency and a reduction of up to 17% in the full width at e−2 intensity of the far field pattern. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 405-407 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly oriented InAs films have been grown on natural diamond by MBE. InAs growths were carried out on diamond and on lattice-matched III–V substrates at 250, 300, and 470 °C. The highest quality films (smoothest surface and highest degree of crystallinity) were obtained at 300 °C. X-ray diffraction data indicate that the films have a strong [111] surface normal orientation. RHEED data indicate that the InAs forms a polyvariant thin film with alignment parallel to the interface of one of the 〈110〉InAs directions with one of the 〈110〉diamond directions.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metallic β-WP2 films have been formed on InP by reacting amorphous peroxopolytungstic acid (APA) films on InP in a PH3/H2 ambient at 600 °C. The resulting metallic film exhibits a low sheet resistance (310 μΩ cm) and preliminary measurements suggest the contact on n-InP is ohmic. By using the unreacted peroxopolytungstic acid films as a negative inorganic photoresist, patterned β-WP2 metallic films on InP have been made without the use of a separate metal film etching step. The reacted metallic films show a smooth, abrupt metal/semiconductor interface. The high temperature stability of β-WP2 on InP suggests that this material may be useful as a refractory contact to InP.
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  • 4
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In this article we describe an advanced inductively coupled plasma ion source being developed at Veeco for applications in data storage and active optical device fabrication. The new source design minimizes rf capacitive coupling. Capacitive coupling is responsible for erosion of the quartz discharge chamber and high transverse ion energies. Suppression of capacitive coupling, however, can be problematic for some applications due to the fact that, without it, conductive coatings that shield the transfer of inductive power to the plasma can accumulate inside the source. The authors have developed a simple and unique protective device that when installed on the quartz hardware effectively inhibits rf losses in the deposited films, greatly extending the quartz maintenance cycle and overcoming the above problem. Reduction of capacitive coupling is achieved using a slotted Faraday shield inserted between the low-frequency 1.8 MHz rf antenna and the plasma. It is found that the rf power loss to this shield is extremely low, yet it is very effective, essentially eliminating signs of discharge chamber sputtering. Further advantages of these new design features and application to special controlled etching processes are described. Also, new performance and reliability data for Veeco's recently developed "flangeless" self-aligned ion optics grid assembly, implemented on the RIM-210 focused beam deposition ion source is shown, demonstrating the advantages of this design. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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