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  • 1
    Publication Date: 2014-10-23
    Description: The holotype of Deinocheirus mirificus was collected by the 1965 Polish-Mongolian Palaeontological Expedition at Altan Uul III in the southern Gobi of Mongolia. Because the holotype consists mostly of giant forelimbs (2.4 m in length) with scapulocoracoids, for almost 50 years Deinocheirus has remained one of the most mysterious dinosaurs. The mosaic of ornithomimosaur and non-ornithomimosaur characters in the holotype has made it difficult to resolve the phylogenetic status of Deinocheirus. Here we describe two new specimens of Deinocheirus that were discovered in the Nemegt Formation of Altan Uul IV in 2006 and Bugiin Tsav in 2009. The Bugiin Tsav specimen (MPC-D 100/127) includes a left forelimb clearly identifiable as Deinocheirus and is 6% longer than the holotype. The Altan Uul IV specimen (MPC-D 100/128) is approximately 74% the size of MPC-D 100/127. Cladistic analysis indicates that Deinocheirus is the largest member of the Ornithomimosauria; however, it has many unique skeletal features unknown in other ornithomimosaurs, indicating that Deinocheirus was a heavily built, non-cursorial animal with an elongate snout, a deep jaw, tall neural spines, a pygostyle, a U-shaped furcula, an expanded pelvis for strong muscle attachments, a relatively short hind limb and broad-tipped pedal unguals. Ecomorphological features in the skull, more than a thousand gastroliths, and stomach contents (fish remains) suggest that Deinocheirus was a megaomnivore that lived in mesic environments.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Lee, Yuong-Nam -- Barsbold, Rinchen -- Currie, Philip J -- Kobayashi, Yoshitsugu -- Lee, Hang-Jae -- Godefroit, Pascal -- Escuillie, Francois -- Chinzorig, Tsogtbaatar -- England -- Nature. 2014 Nov 13;515(7526):257-60. doi: 10.1038/nature13874. Epub 2014 Oct 22.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Geological Museum, Korea Institute of Geoscience and Mineral Resources, Daejeon 305-350, South Korea. ; Paleontological Center, Mongolian Academy of Sciences, Ulaanbaatar 210-351, Mongolia. ; Department of Biological Sciences, University of Alberta, Edmonton, Alberta T6G 2E9, Canada. ; Hokkaido University Museum, Hokkaido University, Sapporo 060-0810, Japan. ; Earth and History of Life, Royal Belgian Institute of Natural Sciences, Rue Vautier 29, 1000 Bruxelles, Belgium. ; Eldonia, 9 Avenue des Portes Occitanes, 3800 Gannat, France.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/25337880" target="_blank"〉PubMed〈/a〉
    Keywords: Animals ; Body Size ; Dinosaurs/*anatomy & histology/*classification ; *Fossils ; Mongolia ; Phylogeny ; Skeleton ; Skull/anatomy & histology ; Spine/anatomy & histology
    Print ISSN: 0028-0836
    Electronic ISSN: 1476-4687
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
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  • 2
    Publication Date: 2012-04-14
    Description: Nitride semiconductors are the materials of choice for a variety of device applications, notably optoelectronics and high-frequency/high-power electronics. One important practical goal is to realize such devices on large, flexible and affordable substrates, on which direct growth of nitride semiconductors of sufficient quality is problematic. Several techniques--such as laser lift-off--have been investigated to enable the transfer of nitride devices from one substrate to another, but existing methods still have some important disadvantages. Here we demonstrate that hexagonal boron nitride (h-BN) can form a release layer that enables the mechanical transfer of gallium nitride (GaN)-based device structures onto foreign substrates. The h-BN layer serves two purposes: it acts as a buffer layer for the growth of high-quality GaN-based semiconductors, and provides a shear plane that makes it straightforward to release the resulting devices. We illustrate the potential versatility of this approach by using h-BN-buffered sapphire substrates to grow an AlGaN/GaN heterostructure with electron mobility of 1,100 cm(2) V(-1) s(-1), an InGaN/GaN multiple-quantum-well structure, and a multiple-quantum-well light-emitting diode. These device structures, ranging in area from five millimetres square to two centimetres square, are then mechanically released from the sapphire substrates and successfully transferred onto other substrates.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Kobayashi, Yasuyuki -- Kumakura, Kazuhide -- Akasaka, Tetsuya -- Makimoto, Toshiki -- England -- Nature. 2012 Apr 11;484(7393):223-7. doi: 10.1038/nature10970.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan. kobayashi.yasuyuki@lab.ntt.co.jp〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/22498627" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0028-0836
    Electronic ISSN: 1476-4687
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
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