Deep-UV light detection has important application in surveillance and homeland security regions. CH 3 NH 3 PbX 3 (X = Cl, Br, I) materials have outstanding optical absorption and electronic transport properties suitable for obtaining excellent deep-UV photoresponse. In this work, we have grown high-quality CH 3 NH 3 PbX 3 (X = Cl, Br, I) bulk crystals and used them to fabricate photodetectors. We found that they all have high-sensitive and fast-speed response to 255 nm deep-UV light. Their responsivities are 10–10 3 times higher than MgZnO and Ga 2 O 3 detectors, and their response speeds are 10 3 times faster than Ga 2 O 3 and ZnO detectors. These results indicate a new promising route for deep-UV detection.
Natural Sciences in General