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• 68.55  (2)
• 78.30  (2)
• 42.55  (1)
• 42.60 K  (1)
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• 68.55  (2)
• 78.30  (2)
• 42.55  (1)
• 42.60 K  (1)
• 61.70T  (4)
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• 1
Electronic Resource
Springer
Applied physics 23 (1980), S. 15-19
ISSN: 1432-0630
Keywords: 64.75+g ; 61.70T ; 42.55
Source: Springer Online Journal Archives 1860-2000
Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
Notes: Abstract The solubility of several dopants (Sb, Ga, Bi, In) in laser treated silicon has been investigated. The dopants were introduced by vacuum deposition followed by ruby laser irradiation. Their solubility was determined by Rutherford backscattering spectroscopy measurements in channelling and random conditions. In all cases, a maximum solubilityC S * , much higher than the equilibrium solubility limitC S 0 and independent of the pulsed laser energy density, was found. The values obtained are in good agreement with those calculated from a simple model based on phase diagram considerations, using the relationship: $$C_S^* = \frac{{C_S^0 }}{{k_0 }}k^* ,$$ wherek 0 andk * are the equilibrium and effective distribution coefficients. Finally, the existence of a new solubility limit for a laser treatment is discussed.
Type of Medium: Electronic Resource
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• 2
Electronic Resource
Springer
Applied physics 25 (1981), S. 139-142
ISSN: 1432-0630
Keywords: 61.80 ; 78.30 ; 85.30
Source: Springer Online Journal Archives 1860-2000
Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
Notes: Abstract High power density electron beams offer new opportunities for studies of epitaxial growth of semiconductor materials. Assuming that the mechanism of epitaxial growth can be understood as a surface melting followed by supercooling regrowth, the heat flow equation has been applied to calculate the temperature reached after an electron beam pulse of power density between 0.5–2 J/cm2. Comparison with laser annealing is made.
Type of Medium: Electronic Resource
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• 3
Electronic Resource
Springer
Applied physics 36 (1985), S. 31-36
ISSN: 1432-0630
Keywords: 42.60 K ; 65
Source: Springer Online Journal Archives 1860-2000
Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
Notes: Abstract Using a pulsed ruby laser (λ=0.69 μm, FWHM=20ns) we have measured the variation of the surface reflectivity during laser irradiation. The melting depth has been measured after repetitive irradiations in order to induce diffusion of dopants to the maximum melt depth. Agreement with thermal model is found. Experimental measurements of time-resolved reflectivity on 1000 Åa-Si onc-Si are explained with the thermal model introducing a low thermal conductivity of 0.002 cal/(cm · s · K) in amorphous silicon.
Type of Medium: Electronic Resource
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• 4
Electronic Resource
Springer
Applied physics 43 (1987), S. 301-304
ISSN: 1432-0630
Keywords: 68.55 ; 78.30 ; 3.40 Q
Source: Springer Online Journal Archives 1860-2000
Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
Notes: Abstract Ultrathin gate oxides (90–300 Å) have been grown on silicon under dry oxygen using a lamp light heater. The oxidation kinetics is quite different from that expected in conventional furnace oxidation since the process is shown to be diffusion limited. Infrared absorption analysis shows neither shift nor broadening of the Si-O stretching mode, indicating that the rapid oxide is stoichiometric with a good structural order. The electrical characteristics of Al-gate capacitors assessed byC-V andG-V measurements with thickness as parameter shows a good quality for oxide films thinner than 100 Å. For thicknesses higher than this value, cleaning techniques and post-oxidation annealing must be used.
Type of Medium: Electronic Resource
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• 5
Electronic Resource
Springer
Applied physics 45 (1988), S. 361-364
ISSN: 1432-0630
Keywords: 68.15 ; 68.55 ; 78.65
Source: Springer Online Journal Archives 1860-2000
Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
Notes: Abstract Modifications induced by a pulsed ArF excimer laser at surface of implanted silicon were investigated by a new and simple optical method which consists to follow the evolution of solid reflectivity, at 633 nm wavelength, resulting from the amorphouspolycrystalline (or monocrystalline) transition during the laser melting process. These results, which have been compared to those obtained using time resolved reflectivity experiments have demonstrated the capability of this simple technique to determine the melting threshold of implanted silicon.
Type of Medium: Electronic Resource
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