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• 61.70T  (4)
• 42.60 K  (1)
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• 1
Electronic Resource
Springer
Applied physics 23 (1980), S. 15-19
ISSN: 1432-0630
Keywords: 64.75+g ; 61.70T ; 42.55
Source: Springer Online Journal Archives 1860-2000
Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
Notes: Abstract The solubility of several dopants (Sb, Ga, Bi, In) in laser treated silicon has been investigated. The dopants were introduced by vacuum deposition followed by ruby laser irradiation. Their solubility was determined by Rutherford backscattering spectroscopy measurements in channelling and random conditions. In all cases, a maximum solubilityC S * , much higher than the equilibrium solubility limitC S 0 and independent of the pulsed laser energy density, was found. The values obtained are in good agreement with those calculated from a simple model based on phase diagram considerations, using the relationship: $$C_S^* = \frac{{C_S^0 }}{{k_0 }}k^* ,$$ wherek 0 andk * are the equilibrium and effective distribution coefficients. Finally, the existence of a new solubility limit for a laser treatment is discussed.
Type of Medium: Electronic Resource
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• 2
Electronic Resource
Springer
Applied physics 50 (1990), S. 317-320
ISSN: 1432-0630
Keywords: 33.80 ; 61.80 ; 61.70T
Source: Springer Online Journal Archives 1860-2000
Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
Notes: Abstract The gas immersion laser doping (GILD) technique requires the measurement of the fraction of incident light absorbed in the gas phase during the irradiation with a pulsed laser. Here we report the absorption of boron trichloride (BCl3) gas at the wavelength of a pulsed ArF excimer laser (λ=193 nm). We have determined the one-photon (σ1) and two-photon (σ) absorption cross sections of this dopant gas for 193 nm. The values of σ1 and σ are 3.6×10−20 cm2 and 9×10−45 cm4·s, respectively. However, the distinction between simultaneous and sequential absorption has not been possible. Based on these results, we have established a relationship which allows the calculation of the fraction of incident light absorbed as a function of incident intensity and gas pressure.
Type of Medium: Electronic Resource
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• 3
Electronic Resource
Springer
Applied physics 36 (1985), S. 31-36
ISSN: 1432-0630
Keywords: 42.60 K ; 65
Source: Springer Online Journal Archives 1860-2000
Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
Notes: Abstract Using a pulsed ruby laser (λ=0.69 μm, FWHM=20ns) we have measured the variation of the surface reflectivity during laser irradiation. The melting depth has been measured after repetitive irradiations in order to induce diffusion of dopants to the maximum melt depth. Agreement with thermal model is found. Experimental measurements of time-resolved reflectivity on 1000 Åa-Si onc-Si are explained with the thermal model introducing a low thermal conductivity of 0.002 cal/(cm · s · K) in amorphous silicon.
Type of Medium: Electronic Resource
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• 4
Electronic Resource
Springer
Applied physics 42 (1987), S. 227-232
ISSN: 1432-0630
Keywords: 81.40E ; 61.80B ; 61.70T ; 71.55
Source: Springer Online Journal Archives 1860-2000
Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
Notes: Abstract We have investigated the annealing behaviour of electrically-active defects induced in virgin n-type and residual in As+ implanted p-type silicon after laser irradiation, using the rapid thermal annealing technique (RTA). Spectra from deep level transient spectroscopy (DLTS) show that three majority carrier traps at E (0.32 eV), E (0.45 eV) and E (0.53 eV) were induced in the n-type Si after Nd-Yag laser treatment at 1.6 J cm−2. Annealing in a rapid thermal furnace at 600 °C for times between 5 and 60 s resulted in a linear decrease of the concentration of these defects and for times ≧ 60 s, they are no longer detectable. A similar result was obtained in the case of the multiple energy As+ implanted samples in which two majority carrier traps at H (0.30 eV), H (0.58 eV) and a minority carrier trap E (0.53 eV) completely disappeared after annealing for 45 s at 600 °C, in spite of the very high concentration of the H (0.58 eV) defect (〉1015 cm−3 up to a depth of about 1.5 μm). A comparison of the annealing rates of the E (0.32 eV) trap using the RTA and the conventional thermal annealing (CTA) techniques at 600 °C showed that the former is at least 30 times faster than the latter. Sheet resistance measurements show that the level of dopant deactivation, due to post-laser thermal treatment at 500 °C (in order to obtain the same reduction in residual defect concentration), is less in the RTA processed samples than in those annealed using conventional methods. These results lend strong support to the hypothesis of ionization-induced enhancement of defect annealing, and to our knowledge, represent the first report of the observation of the phenomenon using the RTA technique.
Type of Medium: Electronic Resource
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• 5
Electronic Resource
Springer
Applied physics 50 (1990), S. 479-484
ISSN: 1432-0630
Keywords: 61.70T ; 79.20D ; 42.60K ; 82.65
Source: Springer Online Journal Archives 1860-2000
Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
Notes: Abstract UV excimer lasers have been used to dope semiconductors by a one-step process in which the laser serves both to melt a controlled thickness of a sample placed in dopant ambient and to photodissociate the dopant molecules themselves. Here we report the boron doping of silicon by means of an ArF (193 nm) excimer laser. Dopant atoms are obtained by photolysis of BCl3 or pyrolysis of BF3 molecules. The doping is performed both in gas ambient and using only an adsorbed layer. We have investigated the dependence of doping parameters such as laser pulse repetition and gas pressure on the subsequent boron impurity profiles and the dopant incorporation rate. These results indicate that the laser doping process is dopant-flux limited for BF3 and externally rate limited for BCl3.
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