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  • 81.40E  (2)
  • 42.60 K  (1)
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  • 1
    ISSN: 1432-0630
    Keywords: 61.16D ; 61.70N ; 81.40E ; 61.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have studied the influence of conventional and rapid thermal treatments at 850°C for 30 min and 10 s, respectively, on the recombination activity of theε9,ε13 (P-type) andε25 (N-type) grain boundaries in silicon. The analyses were made by scanning electron microscopy (SEM) working in the electron beam induced current mode (EBIC) and completed by minority carrier diffusion length measurements. The main result obtained from this study shows the importance of the rapid thermal process as a suitable thermal treatment for polycrystalline materials.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1432-0630
    Keywords: 42.60 K ; 65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Using a pulsed ruby laser (λ=0.69 μm, FWHM=20ns) we have measured the variation of the surface reflectivity during laser irradiation. The melting depth has been measured after repetitive irradiations in order to induce diffusion of dopants to the maximum melt depth. Agreement with thermal model is found. Experimental measurements of time-resolved reflectivity on 1000 Åa-Si onc-Si are explained with the thermal model introducing a low thermal conductivity of 0.002 cal/(cm · s · K) in amorphous silicon.
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  • 3
    ISSN: 1432-0630
    Keywords: 81.40E ; 61.80B ; 61.70T ; 71.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have investigated the annealing behaviour of electrically-active defects induced in virgin n-type and residual in As+ implanted p-type silicon after laser irradiation, using the rapid thermal annealing technique (RTA). Spectra from deep level transient spectroscopy (DLTS) show that three majority carrier traps at E (0.32 eV), E (0.45 eV) and E (0.53 eV) were induced in the n-type Si after Nd-Yag laser treatment at 1.6 J cm−2. Annealing in a rapid thermal furnace at 600 °C for times between 5 and 60 s resulted in a linear decrease of the concentration of these defects and for times ≧ 60 s, they are no longer detectable. A similar result was obtained in the case of the multiple energy As+ implanted samples in which two majority carrier traps at H (0.30 eV), H (0.58 eV) and a minority carrier trap E (0.53 eV) completely disappeared after annealing for 45 s at 600 °C, in spite of the very high concentration of the H (0.58 eV) defect (〉1015 cm−3 up to a depth of about 1.5 μm). A comparison of the annealing rates of the E (0.32 eV) trap using the RTA and the conventional thermal annealing (CTA) techniques at 600 °C showed that the former is at least 30 times faster than the latter. Sheet resistance measurements show that the level of dopant deactivation, due to post-laser thermal treatment at 500 °C (in order to obtain the same reduction in residual defect concentration), is less in the RTA processed samples than in those annealed using conventional methods. These results lend strong support to the hypothesis of ionization-induced enhancement of defect annealing, and to our knowledge, represent the first report of the observation of the phenomenon using the RTA technique.
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