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  • 85.30  (3)
  • 68.55  (2)
  • 42.60 K  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 25 (1981), S. 139-142 
    ISSN: 1432-0630
    Keywords: 61.80 ; 78.30 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract High power density electron beams offer new opportunities for studies of epitaxial growth of semiconductor materials. Assuming that the mechanism of epitaxial growth can be understood as a surface melting followed by supercooling regrowth, the heat flow equation has been applied to calculate the temperature reached after an electron beam pulse of power density between 0.5–2 J/cm2. Comparison with laser annealing is made.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1432-0630
    Keywords: 84.60 ; 85.30 ; 65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract By solving the time-dependent heat flow equation, the temperature reached by silicon and cadmium telluride surface layers under high power density ruby laser pulsed illumination, is calculated. The results are presented in directly useful figures allowing the determination of the surface temperature, its evolution towards the bulk as a function of time... In particular, it should be noticed that for a 25 ns half-power width, pulses of 0.8J/cm2 are sufficient to melt the top of an amorphous silicon layer, this value becomes noticeably lower for cadmium telluride.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1432-0630
    Keywords: 61.80 ; 85.30 ; 71.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Deep-level transient spectroscopy has been used to investigate the defects remaining in ion implantedp-n junctions in silicon after various pulsed annealing techniques, including ruby and YAG lasers as well as pulsed electron beams (PEBA). The nature and distribution of the various identified levels are discussed for each procedure as a function of various experimental parameters.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1432-0630
    Keywords: 42.60 K ; 65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Using a pulsed ruby laser (λ=0.69 μm, FWHM=20ns) we have measured the variation of the surface reflectivity during laser irradiation. The melting depth has been measured after repetitive irradiations in order to induce diffusion of dopants to the maximum melt depth. Agreement with thermal model is found. Experimental measurements of time-resolved reflectivity on 1000 Åa-Si onc-Si are explained with the thermal model introducing a low thermal conductivity of 0.002 cal/(cm · s · K) in amorphous silicon.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 43 (1987), S. 301-304 
    ISSN: 1432-0630
    Keywords: 68.55 ; 78.30 ; 3.40 Q
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ultrathin gate oxides (90–300 Å) have been grown on silicon under dry oxygen using a lamp light heater. The oxidation kinetics is quite different from that expected in conventional furnace oxidation since the process is shown to be diffusion limited. Infrared absorption analysis shows neither shift nor broadening of the Si-O stretching mode, indicating that the rapid oxide is stoichiometric with a good structural order. The electrical characteristics of Al-gate capacitors assessed byC-V andG-V measurements with thickness as parameter shows a good quality for oxide films thinner than 100 Å. For thicknesses higher than this value, cleaning techniques and post-oxidation annealing must be used.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1432-0630
    Keywords: 68.15 ; 68.55 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Modifications induced by a pulsed ArF excimer laser at surface of implanted silicon were investigated by a new and simple optical method which consists to follow the evolution of solid reflectivity, at 633 nm wavelength, resulting from the amorphouspolycrystalline (or monocrystalline) transition during the laser melting process. These results, which have been compared to those obtained using time resolved reflectivity experiments have demonstrated the capability of this simple technique to determine the melting threshold of implanted silicon.
    Type of Medium: Electronic Resource
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