atomic force microscopy
chemical vapour-deposited silicon
recrystallization, phosphorus doping
Polymer and Materials Science
Wiley InterScience Backfile Collection 1832-2000
The surface topography and structure of low-pressure chemical vapour-deposited silicon films grown on the thermal oxide of (100) silicon substrates have been investigated using atomic force microscopy. The measurements have been performed on undoped as-grown samples with deposition temperatures between 550 and 630°C and afterex situphosphorus doping for samples deposited at 620°C. The transition from amorphous to polycrystalline deposition of the silicon film takes place in the temperature range 570-600°C. At 570°C a small number of crystallites are embedded in an amorphous matrix. With increasing temperature the number of crystallites grows rapidly and at 600°C the deposited film is polycrystalline. Doping from a POCl3 source and subsequent annealing of films deposited at 620°C causes complete recrystallization. For the first time it has been possible to investigate the topography and the grain structure of polycrystalline silicon films using a scanning probe technique only. Our clear distinction between these two features allows controversial results from different characterization methods to be clarified.© 1997 John Wiley & Sons, Ltd.
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