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  • 11
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth rates RSi of Si films deposited on Si(001)2×1 from Si2H6 by gas-source molecular-beam epitaxy were determined as a function of temperature Ts (500–950 °C) and impingement flux JSi2H6 (0.3–7.7×1016 cm−2 s−1). RSi (Ts,JSi2H6) curves were well described using a model, with no fitting parameters, based upon dissociative Si2H6 chemisorption followed by a series of surface decomposition reactions with the rate-limiting step being first-order hydrogen desorption from Si monohydride. The zero-coverage Si2H6 reactive sticking probability in the impingement-flux-limited growth regime was found to be 0.036, more than two orders of magnitude higher than that for SiH4. B doping concentrations (CB=5×1016–3×1019 cm−3) from B2H6 increased linearly with increasing flux ratio JB2H6/JSi2H6 at constant Ts and decreased exponentially with 1/Ts at constant JB2H6/JSi2H6. Secondary ion mass spectrometry analyses of modulation-doped samples revealed sharp profiles with no detectable B segregation. Hole mobilities in uniformly doped samples were equal to bulk values.
    Type of Medium: Electronic Resource
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