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  • 11
    ISSN: 1432-0533
    Keywords: Key words Amyotrophic lateral sclerosis ; Neurological ; asymmetry ; Histopathological asymmetry ; Axonal ; transport ; Transneuronal linkage
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract We attempted to correlate the marked neurological asymmetry observed in two amyotrophic lateral sclerosis patients with their histopathological lesions. Patient 1, a 52-year-old man, developed dysarthria and dysphagia, followed by muscle weakness in the left arm and then of the left leg. Patient 2, a 44-year-old man, developed muscle weakness in the left hand, left leg, tongue with left-sided predominance, right hand and right leg in that order of progression. Both patients exhibited moderate to marked left-sided predominant involvement of the lower motor neuron system, accompanied by retained or hyperactive deep tendon reflexes on the left side in the early stage of their illness. Most of the asymmetry in the lower motor neuron system involvement persisted until the death of the patients. Histopathological examinations, including semiquantitative analysis, revealed that both patients exhibited left-sided predominant degeneration of the lower motor neuron system at those spinal cord levels where the neurological asymmetry was of a moderate to marked degree. In addition left-sided predominant degeneration of the lateral corticospinal tracts was seen in both patients and right-sided predominant involvement of Betz cells in the leg area of the motor cortex of patient 1. This pattern of both the neurological and histopathological asymmetry suggested the probable existence of an intimate somatotopically related linkage between the upper motor neuron system degeneration and lower motor neuron system degeneration in both patients.
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  • 12
    ISSN: 1434-3916
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract We examined whether or not free synovial autografts can augment the healing of lesions artificially created in the human knee meniscus in an organ culture model. The effectiveness of free synovial autografts was also compared with that of fibrin glue (Tisseel). In the control group, the accumulation of cellular components increased at the edge of a 4-mm meniscal defect following culture, although no cells were found to invade the defect. In the fibrin glue group, an increased migration of cells into fibrin glue packed into the defect was observed until 4 weeks following cultivation. However, newly formed collagen produced by the cells in the fibrin glue was minimal even 4 weeks after cultivation. In contrast, in the synovial group, newly formed collagen production, as well as cellular proliferation, increased in the grafted synovium with time after cultivation. By 4 weeks, the gap between the edge of the defect and the grafted synovium was bridged by newly formed collagen tissue, indicating improved histologic repair. Our results suggest that free autogenous synovial tissue grafts in meniscal lesions are superior to fibrin glue, and that interpositional synovial autografts to augment repair of meniscal tears in the avascular zone may be clinically useful.
    Type of Medium: Electronic Resource
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  • 13
    ISSN: 1434-3916
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract The effects of exogenous basic fibroblast growth factor (bFGF) on the repair of full-thickness cartilage defects were examined. Four-millimeter diameter, cylindrical defects were made in rabbit articular cartilage and were filled with human recombinant bFGF. The addition of bFGF to the defect induced the formation of a thick cartilage layer composed of chondrocytes and a metachromatic-stained matrix after 6 weeks. The score of the bFGF-treated tissue, as evaluated by a semiquantitative histological scale, was significantly higher than that of the untreated tissue. At 24 weeks, the cartilage-like matrix that contained the proteoglycans and type II collagen was thicker in the bFGF-treated tissue than in the untreated tissue. Immunohistochemical analysis of the tissues at 6–12 weeks with an anti-bFGF monoclonal antibody suggested that a single application of bFGF increased the number of differentiating chondrocytes that synthesized bFGF at a high level. In contrast, immunostaining of the tissues at 6–12 weeks with a monoclonal antibody against proliferating cell nuclear antigen showed that the number of proliferating cells in the bFGF-treated tissue was fewer than in the untreated tissue. These findings suggest that administration of bFGF into cartilagenous defects promotes the differentiation of chondrocytes and their matrix synthesis, and that this growth factor is useful for improving cartilage repair.
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  • 14
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2280-2282 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report electrically detected magnetic resonance (EDMR) measurements on planar Si pn junctions which were isolated via local oxidation of silicon (LOCOS). The investigations of the as-fabricated diodes show the presence of various defects. We observe Pb centers at the boundary to the LOCOS isolation and an isotropic Si dangling bond related signal which is assumed to be a consequence of ion implantation. The E′H center—a hydrogen-complexed oxygen vacancy in the SiO2 device isolation—is also detected via EDMR. The EDMR detection mechanism, which is based on resonant changes of the device current, restricts the detected oxide defects to those which are close to the interface. © 2000 American Institute of Physics.
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  • 15
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 374-376 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The uniaxial stress effects on valence band structures in GaN are investigated by reflectance spectroscopy. It is observed that the energy separation between A and B valence bands increases with the application of uniaxial stress in the c plane. The experimental results are analyzed on the basis of the k⋅p theory, and deformation potential D5 is determined as −3.3 eV. It is indicated that the uniaxial strain effect could be utilized for improving GaN-based laser performance. © 1997 American Institute of Physics.
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  • 16
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4542-4544 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Valence band structures and their strain effects in GaN have been investigated by optical spectroscopy for thick GaN films with high optical quality grown by hydride vapor phase epitaxy. Excitons associated with the A, B, and C valence bands are clearly observed in reflectance measurements without modulation techniques. It is found that the exciton energies shift with the film thickness because of the relaxation of the residual strain. From the quantitative analysis of this behavior, we have precisely determined the valence band splitting parameters in GaN as Δ1=10 meV, Δ2=5.5 meV, and Δ3=6.0 meV. © 1998 American Institute of Physics.
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  • 17
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interface states at the AlN/GaAs interface, which play a dominant role in pinning the surface potential, are studied by means of quasi-static and high-frequency capacitance transient methods. Their charge transfer processes are found to be well described based on the simple deep-level picture. The observation of both behavior as electron traps as well as hole traps has provided evidence that the ionization of these states, not the surface inversion, is the surface potential pinning mechanism in the present insulator-semiconductor system. The time-variant field effect on the electron emission process is observed and reveals the donor nature of the relevant interface states. It is also argued that a defect-related origin is favored rather than a continuously distributed scheme for the interface states examined in the study.
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  • 18
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2549-2551 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of the electron accumulation in the AlGaSb/InAs/AlGaSb QW system with Al composition higher than 0.5 is discussed. In this QW system, it is found that the dominant electron source is donor levels in AlGaSb rather than interface levels which have, so far, been proposed as the electron source. We have found two contradictory results, that undoped AlGaSb shows p-type conduction and Be-doping is compensated electrically, are satisfactorily explained by the model of coexistence of donors and a larger concentration of deep acceptors. Electron accumulation in InAs QW is shown to be controllable by shifting the quantum level with respect to the deep acceptor level.
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  • 20
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Applied Surface Science 82-83 (1994), S. 200-207 
    ISSN: 0169-4332
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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