Chemical vapour deposition
Scanning electron microscopy
Polymer and Materials Science
Wiley InterScience Backfile Collection 1832-2000
Electrical Engineering, Measurement and Control Technology
The unsubstituted bis-β-diketonato complex of copper, Cu(acac)2 (acac = pentane-3, 5-dionato), has been used to deposit both elemental copper and copper oxide thin films by metal-organic chemical vapour deposition (MOCVD). For all Cu(II) bis-β-diketonates, growth of oxygen-free layers requires the breakage of four copper-oxygen bonds present in the precursor. The influence of carrier gas composition on deposit morphology has been examined for six parameter sets: both hydrous and anhydrous streams, each for reducing (H2), inert (Ar) and oxidising (O2) environments.
Type of Medium: