AIP Digital Archive
Electrical Engineering, Measurement and Control Technology
Unlike widely published sources MEVVA, since 1984 we have constructed vacuum arc ion sources of any hard electroconductive materials (like metal or composites type—TiC, TiSiC, NiCrAlY, MoS, TiMoSi, WAlB, TiBNi) for modification of materials. The principle of Technological Accelerator of Metal ion and Electron Kit—source TAMEK, provides realization of regimes mentioned in the title in each (or in any series) of a sequence of f=50 Hz pulses: t=300 μs, Ii〈1 A, Ei〈200 keV, dDi=1016 ion/cm2/min for implantation and t=1000 μs, Iarc〈2000 A, dh=50–200 nm/min for deposition and so realized, if you wish, ion implantation, deposition, mixing, ion-beam-assisted deposition of the same ions without switching off the source. The experimental data demonstrate the possibility of obtaining mutual mixed (10×90 at %) alloyed layers up to 3 μm for time in t=15 min at T=100 °C temperature surface, with structure improving (microhardness) inner layer up to 50 μm in depth and possibility of further coating growth on the surface. This report presents a brief review of TAMEK principle design and its application for modification of constructed materials.
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