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    ISSN: 1573-9228
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The coefficient of interband absorption in a heavily doped, strongly compensated semiconductor with a narrow forbidden band was calculated for emission frequencies ħω which are smaller than the widthɛ g of the forbidden band. If the width of the forbidden band is smaller than the characteristic energy w0 of the random field produced by randomly distributed impurities, the optical absorption gap is missing and the coefficient of absorption increases with the frequency, with the increase being basically proportional toω.
    Type of Medium: Electronic Resource
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